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1. Single crystal synthesis and properties of the two-dimensional van der Waals frustrated magnets, Mn ₂ In ₂ Se ₅ and Mn ₂ Ga ₂ S ₅

   https://doi.org/10.1039/D3TC03550F  

   Williams, Archibald J; Reifsnyder, Alexander; Yu, Bowen; Moore, Curtis E; Susner, Michael A; Windl, Wolfgang; McComb, David W; Goldberger, Joshua E (February 2024, Journal of Materials Chemistry C)

   We establish the synthesis, physical properties, and highly-frustrated magnetism of Mn₂In₂Se₅and Mn₂Ga₂S₅van der Waals crystals. 

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2. Molecular Beam Epitaxy of Mn ₂ In ₂ Se ₅ van der Waals Layers Using Mn Intercalation

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   Zhang, Qihua; Wang, Ke; Auker, Wesley; Hilse, Maria; Law, Stephanie (April 2025, Crystal Growth & Design)
3. Electronic band structure and magnetism of CoFeV _0.5 Mn _0.5 Si

   https://doi.org/10.1063/9.0000252  

   Kharel, Parashu; Baker, Gavin; Flesche, Matthew; Ramker, Adam; Moua, Young; Valloppilly, Shah; Shand, Paul M.; Lukashev, Pavel V. (March 2022, AIP Advances)

   Half-metallic Heusler alloys have attracted significant attention due to their potential application in spin-transport-based devices. We have synthesized one such alloy, CoFeV 0.5 Mn 0.5 Si, using arc melting and high-vacuum annealing at 600 °C for 24 hours. First principles calculation indicates that CoFeV 0.5 Mn 0.5 Si shows a nearly half-metallic band structure with a degree of spin polarization of about 93%. In addition, this value can be enhanced by the application of tensile strain. The room temperature x-ray diffraction patterns are indexed with the cubic crystal structure without secondary phases. The annealed sample shows ferromagnetic order with the Curie temperature well above room temperature ( T c = 657 K) and a saturation magnetization of about 92 emu/g. Our results indicate that CoFeV 0.5 Mn 0.5 Si has a potential for room temperature spin-transport-based devices. 

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4. Orbital competition of Mn ³⁺ and V ³⁺ ions in Mn _1+x V _2-x O ₄

   https://doi.org/10.1088/1361-648X/abd9a1  

   Jiao, J L; Zhang, H P; Huang, Q; Wang, W; Sinclair, R; Wang, G; Ren, Q; Lin, G T; Huq, A; Zhou, H D; et al (January 2021, Journal of Physics: Condensed Matter)

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5. Electronic, magnetic and structural properties of CoFeVAl and CoFeV _0.5 Mn _0.5 Al

   https://doi.org/10.1088/1361-6463/ad5696  

   Kharel, Parashu; Baker, Gavin; Wieberdink, Matthew; Diallo, Salimatou; Anas, Mohd; Shand, Paul M; Lukashev, Pavel V (June 2024, Journal of Physics D: Applied Physics)

   In this study, we present results of a comprehensive computational and experimental study of CoFeVAl and CoFeV0.5Mn0.5Al Heusler alloys. It is shown that while CoFeVAl exhibits a fairly large degree of spin polarization, this material is not half-metallic due to the presence of the vanadium spin-down states at the Fermi level. However, replacing 50% of vanadium with manganese results in a nearly half-metallic transition, largely due to the shift of the Fermi level towards occupied states. Moreover, the half-metallicity of CoFeV0.5Mn0.5Al is rather robust in a wide range of considered mechanical strain and under experimentally observed B2-type atomic disorder, thus making this alloy potentially suitable for practical spintronic applications. Both considered alloys exhibit ferromagnetic alignment at larger lattice constants, aside from a relatively small magnetic moment of vanadium which is anti-aligned with the magnetic moments of Co, Fe and Mn. We have synthesized both CoFeVAl and CoFeV0.5Mn0.5Al alloys in cubic structure with some structural disorder using arc melting and annealing. The structural and magnetic properties of the synthesized CoFeV0.5Mn0.5Al alloy are in good agreement with the theoretical calculations but vary slightly from the parent compound. 

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