Manipulation and structural modifications of 2D materials for nanoelectronic and nanofluidic applications remain obstacles to their industrial‐scale implementation. Here, it is demonstrated that a 30 kV focused ion beam can be utilized to engineer defects and tailor the atomic, optoelectronic, and structural properties of monolayer transition metal dichalcogenides (TMDs). Aberration‐corrected scanning transmission electron microscopy is used to reveal the presence of defects with sizes from the single atom to 50 nm in molybdenum (MoS2) and tungsten disulfide (WS2) caused by irradiation doses from 1013to 1016ions cm−2. Irradiated regions across millimeter‐length scales of multiple devices are sampled and analyzed at the atomic scale in order to obtain a quantitative picture of defect sizes and densities. Precise dose value calculations are also presented, which accurately capture the spatial distribution of defects in irradiated 2D materials. Changes in phononic and optoelectronic material properties are probed via Raman and photoluminescence spectroscopy. The dependence of defect properties on sample parameters such as underlying substrate and TMD material is also investigated. The results shown here lend the way to the fabrication and processing of TMD nanodevices.
Lateral heterogeneities in atomically thin 2D materials such as in‐plane heterojunctions and grain boundaries (GBs) provide an extrinsic knob for manipulating the properties of nano‐ and optoelectronic devices and harvesting novel functionalities. However, these heterogeneities have the potential to adversely affect the performance and reliability of the 2D devices through the formation of nanoscopic hot‐spots. In this report, scanning thermal microscopy (SThM) is utilized to map the spatial distribution of the temperature rise within monolayer transition metal dichalcogenide (TMD) devices upon dissipating a high electrical power through a lateral interface. The results directly demonstrate that lateral heterojunctions between MoS2and WS2do not largely impact the distribution of heat dissipation, while GBs of MoS2appreciably localize heating in the device. High‐resolution scanning transmission electron microscopy reveals that the atomic structure is nearly flawless around heterojunctions but can be quite defective near GBs. The results suggest that the interfacial atomic structure plays a crucial role in enabling uniform charge transport without inducing localized heating. Establishing such structure–property‐processing correlation provides a better understanding of lateral heterogeneities in 2D TMD systems which is crucial in the design of future all‐2D electronic circuitry with enhanced functionalities, lifetime, and performance.
more » « less- NSF-PAR ID:
- 10418175
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials
- Volume:
- 31
- Issue:
- 24
- ISSN:
- 0935-9648
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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