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Abstract As known, n‐type inorganic semiconductor nanoparticles such as zinc oxide nanoparticles have been explored in various sensing applications, which demand high‐density electronic elements placement for rapid operation. Herein, high‐resolution designs of conductive channels of noble metal‐doped zinc oxide nanoparticles is demonstrated using an engraving transfer printing process and silver metal doping approach. Such thin‐film transistors with reduced feature size to 2 µm fabricated exhibited significantly enhanced electron mobility up 3.46 × 10−2cm2V−1s−1and light sensitivity. Furthermore, the integration of this micropatterning technology and metal doping in thin‐film transistors is utilized for control of current–voltage characteristics under the ultraviolet radiation with high sensitivity. It is suggested that this approach to design of doped inorganic nanoparticle channels paves the way for high‐density thin‐film transistors suitable for optoelectronic circuit, UV photodetectors and neuromorphic computing systems.
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Continuous Liquid Metal Printing for Rapid Metal Oxide TFT Integration
We present a rapid liquid metal printing process (CLMP) enabling fabrication of high-mobility metal oxide semiconducting channels in less than 3 seconds. We use this process to engineer heterostructure TFTs with channels consisting of 3 nm layers of In2O3 and Ga2O3 with improved subthreshold slope and enhanced on-state performance (uave∼14cm2/Vs) . We report the influence of deposition temperature and speed, investigating crystallinity and grain morphology of this class of 2D oxide semiconductors.
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- PAR ID:
- 10423388
- Date Published:
- Journal Name:
- 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
- Page Range / eLocation ID:
- 1 to 3
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Conference Paper:
- https://doi.org/10.1109/EDTM55494.2023.10102933
