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Injection of interstitial atoms by specially prepared surfaces submerged in liquid water near room temperature offers an attractive approach for post-synthesis defect manipulation and isotopic purification in device structures. However, this approach can be limited by trapping reactions that form small defect clusters. The compositions and dissociation barriers of such clusters remain mostly unknown. This communication seeks to address this gap by measuring the dissociation energies of oxygen interstitial traps in rutile TiO2 and wurtzite ZnO exposed to liquid water. Isotopic self-diffusion measurements using 18O, combined with progressive annealing protocols, suggest the traps are small interstitial clusters with dissociation energies ranging from 1.3 to 1.9 eV. These clusters may comprise a family incorporating various numbers, compositions, and configurations of O and H atoms; however, in TiO2, native interstitial clusters left over from initial synthesis may also play a role. Families of small clusters are probably common in semiconducting oxides and have several consequences for post-synthesis defect manipulation and purification of semiconductors using submerged surfaces.
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Effects of adventitious impurity adsorption on oxygen interstitial injection rates from submerged TiO 2 (110) and ZnO(0001) surfaces
Low bond coordination of surface atoms facilitates the injection of oxygen interstitial atoms into the bulk near room temperature from the clean surfaces of semiconducting metal oxides when exposed to liquid water, opening new prospects for postsynthesis defect engineering and isotopic fractionation. The injection rate and penetration depth vary considerably under identical experimental conditions, however, with the adsorption of adventitious carbon suggested as the cause. For water-submerged rutile TiO 2 (110) and wurtzite ZnO(0001), this work bolsters and refines that hypothesis by combining the isotopic self-diffusion measurements of oxygen with characterization by x-ray photoelectron spectroscopy and atomic force microscopy. Adventitious carbon likely diminishes injection rates by poisoning small concentrations of exceptionally active surface sites that either inject O or dissociate adsorbed OH to injectable O. These effects propagate into the penetration depth via the progressive saturation of O i traps near the surface, which occurs less extensively as the injected flux decreases.
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- Award ID(s):
- 1709327
- PAR ID:
- 10424809
- Date Published:
- Journal Name:
- Journal of Vacuum Science & Technology A
- Volume:
- 41
- Issue:
- 3
- ISSN:
- 0734-2101
- Page Range / eLocation ID:
- 033203
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.1116/6.0002467
