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1. Mid-IR spectroscopy of Er 3+ doped low-phonon CsCdCl 3 and CsPbCl 3 crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei Ei ; Fleischman, Zackery D. ; McKay, Jason ; Hommerich, Uwe ; Kabir, Al Amin ; Riggins, Jazmine ; Trivedi, Sudhir ; Dubinskii, Mark ( September 2022 , Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at$\sim <\#comment/>800\mathrm{n}\mathrm{m}$and$\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at$\sim <\#comment/>1.55$,$\sim <\#comment/>2.75$,$\sim <\#comment/>3.5$, and$\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of$\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of$\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be$\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and$\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed.

    

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2. Effective field theory analysis of 3 He–α scattering data

   https://doi.org/10.1088/1361-6471/ac4da6  

   Poudel, Maheshwor ; Phillips, Daniel R ( March 2022 , Journal of Physics G: Nuclear and Particle Physics)

   Abstract We treat low-energy 3 He– α elastic scattering in an effective field theory (EFT) that exploits the separation of scales in this reaction. We compute the amplitude up to next-to-next-to-leading order, developing a hierarchy of the effective-range parameters (ERPs) that contribute at various orders. We use the resulting formalism to analyse data for recent measurements at center-of-mass energies of 0.38–3.12 MeV using the scattering of nuclei in inverse kinematics (SONIK) gas target at TRIUMF as well as older data in this energy regime. We employ a likelihood function that incorporates the theoretical uncertainty due to truncation of the EFT and use Markov chain Monte Carlo sampling to obtain the resulting posterior probability distribution. We find that the inclusion of a small amount of data on the analysing power A y is crucial to determine the sign of the p-wave splitting in such an analysis. The combination of A y and SONIK data constrains all ERPs up to O ( p 4 ) in both s- and p-waves quite well. The asymptotic normalisation coefficients and s-wave scattering length are consistent with a recent EFT analysis of the capture reaction 3 He( α , γ ) 7 Be. 

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3. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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4. Experimental study of the proton-transfer reaction C + H 2 + → CH + + H and its isotopic variant (D 2 + )

   https://doi.org/10.1039/D0CP04810K  

   Hillenbrand, Pierre-Michel ; Bowen, Kyle P. ; Dayou, Fabrice ; Miller, Kenneth A. ; de Ruette, Nathalie ; Urbain, Xavier ; Savin, Daniel W. ( December 2020 , Physical Chemistry Chemical Physics)

   We report absolute integral cross section (ICS) measurements using a dual-source merged-fast-beams apparatus to study the titular reactions over the relative translational energy range of E r ∼ 0.01–10 eV. We used photodetachment of C − to produce a pure beam of atomic C in the ground electronic 3 P term, with statistically populated fine-structure levels. The H 2 + and D 2 + were formed in an electron impact ionization source, with well known vibrational and rotational distributions. The experimental work is complemented by a theoretical study of the CH 2 + electronic system in the reactant and product channels, which helps to clarify the possible reaction mechanisms underlying the ICS measurements. Our measurements provide evidence that the reactions are barrierless and exoergic. They also indicate the apparent absence of an intermolecular isotope effect, to within the total experimental uncertainties. Capture models, taking into account either the charge-induced dipole interaction potential or the combined charge-quadrupole and charge-induced dipole interaction potentials, produce reaction cross sections that lie a factor of ∼4 above the experimental results. Based on our theoretical study, we hypothesize that the reaction is most likely to proceed adiabatically through the 1 4 A′ and 1 4 A′′ states of CH 2 + via the reaction C( 3 P) + H 2 + ( 2 Σ+g) → CH + ( 3 Π) + H( 2 S). We also hypothesize that at low collision energies only H 2 + ( v ≤ 2) and D 2 + ( v ≤ 3) contribute to the titular reactions, due to the onset of dissociative charge transfer for higher vibrational v levels. Incorporating these assumptions into the capture models brings them into better agreement with the experimental results. Still, for energies ≲0.1 eV where capture models are most relevant, the modified charge-induced dipole model yields reaction cross sections with an incorrect energy dependence and lying ∼10% below the experimental results. The capture cross section obtained from the combined charge-quadrupole and charge-induced dipole model better matches the measured energy dependence but lies ∼30–50% above the experimental results. These findings provide important guidance for future quasiclassical trajectory and quantum mechanical treatments of this reaction. 

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5. New Experimental 23 Na(α, p) 26 Mg Reaction Rate for Massive Star and Type Ia Supernova Models

   https://doi.org/10.3847/1538-4357/abee91  

   Hubbard, N. J. ; Diget, C. Aa. ; Fox, S. P. ; Fynbo, H. O. U. ; Howard, A. M. ; Kirsebom, O. S. ; Laird, A. M. ; Munch, M. ; Parikh, A. ; Pignatari, M. ; et al ( May 2021 , The Astrophysical Journal)

   The²³Na(α,p)²⁶Mg reaction has been identified as having a significant impact on the nucleosynthesis of several nuclei between Ne and Ti in Type Ia supernovae, and of²³Na and²⁶Al in massive stars. The reaction has been subjected to renewed experimental interest recently, motivated by high uncertainties in early experimental data and in the statistical Hauser-Feshbach models used in reaction rate compilations. Early experiments were affected by target deterioration issues and unquantifiable uncertainties. Three new independent measurements instead are utilizing inverse kinematics and Rutherford scattering monitoring to resolve this. In this work we present directly measured angular distributions of the emitted protons to eliminate a discrepancy in the assumptions made in the recent reaction rate measurements, which results in cross sections differing by a factor of 3. We derive a new combined experimental reaction rate for the²³Na(α,p)²⁶Mg reaction with a total uncertainty of 30% at relevant temperatures. Using our new²³Na(α,p)²⁶Mg rate, the²⁶Al and²³Na production uncertainty is reduced to within 8%. In comparison, using the factor of 10 uncertainty previously recommended by the rate compilation STARLIB,²⁶Al and²³Na production was changing by more than a factor of 2. In Type Ia supernova conditions, the impact on production of²³Na is constrained to within 15%.

    

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