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The yellow luminescence (YL) band with a maximum at 2.2 eV is the dominant defect-related luminescence in unintentionally doped GaN. The discovery of the mechanism responsible for this luminescence band and related defects in GaN took many years. Eventually, a consensus has been reached that the CN acceptor is the source of the YL band (the YL1 band) in GaN samples grown by several techniques. Previously suggested candidates, such as VGa, VGaON, CNON, and CNSiGa, should be discarded. At the same time, other defects (such as the VN, BeGa, and CaGa) may cause luminescence bands with positions and shapes not much different from the YL1 band. In GaN containing high concentrations of gallium vacancies, oxygen, and hydrogen, complexes containing these species may also contribute in the red-yellow part of the photoluminescence spectrum. The main controversies related to the YL band are resolved.
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Photoluminescence from defects in GaN
We present the most recent results of photoluminescence (PL) studies, classification of defects in GaN and their properties. In particular, the yellow luminescence band (labeled YL1) with a maximum at 2.17 eV in undoped GaN grown by most common techniques is unambiguously attributed to the isolated CN acceptor. From the zero-phonon line (ZPL) at 2.59 eV, the /0 level of this acceptor is found at 0.916 eV above the valence band. The PL also reveals the 0/+ level of the CN at 0.33 eV above the valence band, which is responsible for the blue band (BLC), with the ZPL at 3.17 eV. Another yellow band (YL2) with a maximum at 2.3 eV, observed only in GaN grown by the ammonothermal method, is attributed to the VGa3H complex. The nitrogen vacancy (VN) causes the green luminescence (GL2) band. The VN also forms complexes with acceptors such as Mg, Be, and Ca. These complexes are responsible for the red luminescence bands (the RL2 family) in high-resistivity GaN. The results from PL studies are compared with theoretical predictions. Uncertainties in the parameters of defects are discussed.
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- Award ID(s):
- 1904861
- PAR ID:
- 10429922
- Editor(s):
- Morkoç, Hadis; Fujioka, Hiroshi; Schwarz, Ulrich T.
- Date Published:
- Journal Name:
- Photoluminescence from defects in GaN
- Volume:
- 1242109
- Page Range / eLocation ID:
- 17
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
-
Accepted Manuscript
- Conference Paper:
- https://doi.org/10.1117/12.2645878
