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Abstract A key advantage of utilizing van‐der‐Waals (vdW) materials as defect‐hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrate allowing for improved light extraction, enhanced coupling with photonic elements, or more sensitive metrology. However, this aspect results in a significant challenge for defect identification and characterization, as the defect's properties depend on the the atomic environment. This study explores how the environment can influence the properties of carbon impurity centers in hexagonal boron nitride (hBN). It compares the optical and electronic properties of such defects between bulk‐like and few‐layer films, showing alteration of the zero‐phonon line energies and their phonon sidebands, and enhancements of inhomogeneous broadenings. To disentangle the mechanisms responsible for these changes, including the atomic structure, electronic wavefunctions, and dielectric screening, it combines ab initio calculations with a quantum‐embedding approach. By studying various carbon‐based defects embedded in monolayer and bulk hBN, it demonstrates that the dominant effect of the change in the environment is the screening of density–density Coulomb interactions between the defect orbitals. The comparative analysis of experimental and theoretical findings paves the way for improved identification of defects in low‐dimensional materials and the development of atomic scale sensors for dielectric environments.
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Defect characterization in optical coatings using scattered light
Optical coatings play a vital role in sensing technologies. The development of new coatings that exhibit minimal optical losses requires a detailed understanding of the development of defects within them. Current methods of defect characterization involve direct microscope imaging or x-ray diffraction studies in the case of crystallites. In this paper, we demonstrate the characterization of coating defects using light scattering, which can yield information about their size, location, and index of refraction. The method requires measuring the scattered power of each individual defect as a function of angle and comparing the data with theoretical models. Finally, we argue that this method can be used for the determination of the defect location within a multi-layer stack.
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- Award ID(s):
- 2207858
- PAR ID:
- 10435634
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Applied Optics
- Volume:
- 62
- Issue:
- 22
- ISSN:
- 1559-128X; APOPAI
- Format(s):
- Medium: X Size: Article No. 6046
- Size(s):
- Article No. 6046
- Sponsoring Org:
- National Science Foundation
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