An official website of the United States government
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are essential components in modern radio frequency power amplifiers. In order to improve both the device electrical and thermal performance (e.g., higher current density operation and better heat dissipation), researchers are introducing AlN into the GaN HEMT structure. The knowledge of thermal properties of the constituent layers, substrates, and interfaces is crucial for designing and optimizing GaN HEMTs that incorporate AlN into the device structure as the barrier layer, buffer layer, and/or the substrate material. This study employs a multi-frequency/spot-size time-domain thermoreflectance approach to measure the anisotropic thermal conductivity of (i) AlN and GaN epitaxial films, (ii) AlN and SiC substrates, and (iii) the thermal boundary conductance for GaN/AlN, AlN/SiC, and GaN/SiC interfaces (as a function of temperature) by characterizing GaN-on-SiC, GaN-on-AlN, and AlN-on-SiC epitaxial wafers. The thermal conductivity of both AlN and GaN films exhibits an anisotropy ratio of ∼1.3, where the in-plane thermal conductivity of a ∼1.35 μm thick high quality GaN layer (∼223 W m−1 K−1) is comparable to that of bulk GaN. A ∼1 μm thick AlN film grown by metalorganic chemical vapor deposition possesses a higher thermal conductivity than a thicker (∼1.4 μm) GaN film. The thermal boundary conductance values for a GaN/AlN interface (∼490 MW m-2 K−1) and AlN/SiC interface (∼470 MW m−2 K−1) are found to be higher than that of a GaN/SiC interface (∼305 MW m−2 K−1). This work provides thermophysical property data that are essential for optimizing the thermal design of AlN-incorporated GaN HEMT devices.
more »
« less
Growth-microstructure-thermal property relations in AlN thin films
AlN thin films are enabling significant progress in modern optoelectronics, power electronics, and microelectromechanical systems. The various AlN growth methods and conditions lead to different film microstructures. In this report, phonon scattering mechanisms that impact the cross-plane (κz; along the c-axis) and in-plane (κr; parallel to the c-plane) thermal conductivities of AlN thin films prepared by various synthesis techniques are investigated. In contrast to bulk single crystal AlN with an isotropic thermal conductivity of ∼330 W/m K, a strong anisotropy in the thermal conductivity is observed in the thin films. The κz shows a strong film thickness dependence due to phonon-boundary scattering. Electron microscopy reveals the presence of grain boundaries and dislocations that limit the κr. For instance, oriented films prepared by reactive sputtering possess lateral crystalline grain sizes ranging from 20 to 40 nm that significantly lower the κr to ∼30 W/m K. Simulation results suggest that the self-heating in AlN film bulk acoustic resonators can significantly impact the power handling capability of RF filters. A device employing an oriented film as the active piezoelectric layer shows an ∼2.5× higher device peak temperature as compared to a device based on an epitaxial film.
more »
« less
- PAR ID:
- 10439959
- Author(s) / Creator(s):
- ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; more »
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 132
- Issue:
- 17
- ISSN:
- 0021-8979
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
To increase the storage capacity of hard disk drives, Heat-Assisted Magnetic Recording (HAMR) takes advantage of laser heating to temporarily reduce the coercivity of recording media, enabling the writing of very small data bits on materials with high thermal stability. One key challenge in implementing HAMR is effective thermal management, which requires reliable determination of the thermal properties of HAMR materials over their range of operating temperature. This work reports the thermal properties of dielectric (amorphous silica, amorphous alumina, and AlN), metallic (gold and copper), and magnetic alloy (NiFe and CoFe) thin films used in HAMR heads from room temperature to 500 K measured with time-domain thermoreflectance. Our results show that the thermal conductivities of amorphous silica and alumina films increase with temperature, following the typical trends for amorphous materials. The polycrystalline AlN film exhibits weak thermal anisotropy, and its in-plane and through-plane thermal conductivities decrease with temperature. The measured thermal conductivities of AlN are significantly lower than that which would be present in single-crystal bulk material, and this is attributed to enhanced phonon-boundary scattering and phonon-defect scattering. The gold, copper, NiFe, and CoFe films show little temperature dependence in their thermal conductivities over the same temperature range. The measured thermal conductivities of gold and copper films are explained by the diffuse electron-boundary scattering using an empirical model.more » « less
-
Despite its importance, a sophisticated theoretical study of thermal conductivity in bulk h-BN has been lacking to date. In this study, we predict thermal conductivity in bulk h-BN crystals using first-principles predictions and the Boltzmann transport equation. We consider three-phonon (3ph) scattering, four-phonon (4ph) scattering, and phonon renormalization. Our predicted thermal conductivity is 363 and 4.88 W/(m K) for the in-plane and out-of-plane directions at room temperature, respectively. Further analysis reveals that 4ph scattering reduces thermal conductivity, while phonon renormalization weakens phonon anharmonicity and increases thermal conductivity. Eventually, the in-plane and out-of-plane thermal conductivities show intriguing ∼T−0.627 and ∼T−0.568 dependencies, respectively, far deviating from the traditional 1/T relation.more » « less
-
Hydrogenated amorphous silicon (a-Si:H) has drawn keen interest as a thin-film semiconductor and superb passivation layer in high-efficiency silicon solar cells due to its low cost, low processing temperature, high compatibility with substrates, and scalable manufacturing. Although the impact of hydrogenation on the structural, optical, and electronic properties of a-Si:H has been extensively studied, the underlying physics of its impact on the thermal properties is still unclear. Here, we synthesize a-Si:H films with well-controlled hydrogen concentrations using plasma-enhanced chemical vapor deposition and systematically study the thermal conductivity of these a-Si:H films using time-domain thermoreflectance. We find that the reduction of thermal conductivity of a-Si:H films is attributed to the suppression of diffuson and propagon contributions as the hydrogen concentration increases. At the maximum hydrogen concentration of 25.4 atomic percentage, the contributions from diffusons and propagons to the thermal conductivity are decreased by 40% (from 1.10 to 0.67 W m −1 K −1 ) and 64% (from 0.61 to 0.22 W m −1 K −1 ), respectively. Such a significant reduction in the thermal conductivity of a-Si:H originates from the hydrogen induced material softening, the decrease in density, and phonon-defect scattering. The results of this work provide fundamental insights into the thermal transport properties of a-Si:H thin films, which is beneficial for the design and optimization of amorphous silicon-based technologies including photovoltaics, large-area electronics, and thermoelectric devices.more » « less
-
Two-dimensional layered transition metal dichalcogenides are potential thermoelectric candidates with application in on-chip integrated nanoscale cooling and power generation. Here, we report a comprehensive experimental and theoretical study on the in-plane thermoelectric transport properties of thin 2H-MoTe2 flakes prepared in field-effect transistor geometry to enable electrostatic gating and modulation of the electronic properties. The thermoelectric power factor is enhanced by up to 45% using electrostatic modulation. The in-plane thermal conductivity of 9.8 ± 3.7 W m−1 K−1 is measured using the heat diffusion imaging method in a 25 nm thick flake. First-principles calculations are used to obtain the electronic band structure, phonon band dispersion, and electron–phonon scattering rates. The experimental electronic properties are in agreement with theoretical results obtained within energy-dependent relaxation time approximation. The thermal conductivity is evaluated using both the relaxation time approximation and the full iterative solution to the phonon Boltzmann transport equation. This study establishes a framework to quantitively compare first-principle-based calculations with experiments in 2D layered materials.more » « less
