Scalable programmable photonic integrated circuits (PICs) can potentially transform the current state of classical and quantum optical information processing. However, traditional means of programming, including thermo-optic, free carrier dispersion, and Pockels effect result in either large device footprints or high static energy consumptions, significantly limiting their scalability. While chalcogenide-based non-volatile phase-change materials (PCMs) could mitigate these problems thanks to their strong index modulation and zero static power consumption, they often suffer from large absorptive loss, low cyclability, and lack of multilevel operation. Here, we report a wide-bandgap PCM antimony sulfide (Sb2S3)-clad silicon photonic platform simultaneously achieving low loss (<1.0 dB), high extinction ratio (>10 dB), high cyclability (>1600 switching events), and 5-bit operation. These Sb2S3-based devices are programmed via on-chip silicon PIN diode heaters within sub-ms timescale, with a programming energy density of
Phase change materials (PCMs) have long been used as a storage medium in rewritable compact disk and later in random access memory. In recent years, integration of PCMs with nanophotonic structures has introduced a new paradigm for non‐volatile reconfigurable optics. However, the high loss of the archetypal PCM Ge2Sb2Te5in both visible and telecommunication wavelengths has fundamentally limited its applications. Sb2S3has recently emerged as a wide‐bandgap PCM with transparency windows ranging from 610 nm to near‐IR. In this paper, the strong optical phase modulation and low optical loss of Sb2S3are experimentally demonstrated for the first time in integrated photonic platforms at both 750 and 1550 nm. As opposed to silicon, the thermo‐optic coefficient of Sb2S3is shown to be negative, making the Sb2S3–Si hybrid platform less sensitive to thermal fluctuation. Finally, a Sb2S3integrated non‐volatile microring switch is demonstrated which can be tuned electrically between a high and low transmission state with a contrast over 30 dB. This work experimentally verifies prominent phase modification and low loss of Sb2S3in wavelength ranges relevant for both solid‐state quantum emitter and telecommunication, enabling potential applications such as optical field programmable gate array, post‐fabrication trimming, and large‐scale integrated quantum photonic network.
more » « less- NSF-PAR ID:
- 10452965
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Optical Materials
- Volume:
- 9
- Issue:
- 9
- ISSN:
- 2195-1071
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
Abstract $$\sim 10\,{fJ}/n{m}^{3}$$ -
more » « less
Abstract Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic–photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum information, and microwave photonics. Success in these fields usually requires highly scalable photonic switching units as essential building blocks. Current photonic switches, however, mainly rely on materials with weak, volatile thermo‐optic or electro‐optic modulation effects, resulting in large footprints and high energy consumption. As a promising alternative, chalcogenide phase‐change materials (PCMs) exhibit strong optical modulation in a static, self‐holding fashion, but the scalability of present PCM‐integrated photonic applications is still limited by the poor optical or electrical actuation approaches. Here, with phase transitions actuated by in situ silicon PIN diode heaters, scalable nonvolatile electrically reconfigurable photonic switches using PCM‐clad silicon waveguides and microring resonators are demonstrated. As a result, intrinsically compact and energy‐efficient switching units operated with low driving voltages, near‐zero additional loss, and reversible switching with high endurance are obtained in a complementary metal‐oxide‐semiconductor (CMOS)‐compatible process. This work can potentially enable very large‐scale CMOS‐integrated programmable electronic–photonic systems such as optical neural networks and general‐purpose integrated photonic processors.
-
more » « less
Abstract The generation of rapidly tunable optical vortex (OV) beams is one of the most demanding research areas of the present era as they possess orbital angular momentum (OAM) with additional degrees of freedom that can be exploited to enhance signal‐carrying capacity by using mode division multiplexing and information encoding in optical communication. Particularly, rapidly tunable OAM devices at a fixed wavelength in the telecom band stir extensive interest among researchers for both classical and quantum applications. This article demonstrates the realistic design of a Si‐integrated photonic device for rapidly tunable OAM wave generation at a 1550‐nm wavelength by using an ultra‐low‐loss phase change material (PCM) embedded with a Si‐ring resonator with angular gratings. Different OAM modes are achieved by tuning the effective refractive index using rapid electrical switching of Sb2Se3 film from amorphous to crystalline states and vice versa. The generation of OAM waves relies on a traveling wave modulation of the refractive index of the micro‐ring, which breaks the degeneracy of oppositely oriented whispering gallery modes. The proposed device is capable of producing rapidly tunable OV beams, carrying different OAM modes by using electrically controllable switching of ultra‐low‐loss PCM Sb2Se3.
-
The ever-growing data traffic requires greater transmission bandwidth and better energy efficiency in chip scale interconnects. The emerging transistor-laser-based electronic-photonic processing platform stands out for its high electrical-to-optical efficiency. Because transistor lasers operate best at 980 nm, efficient optical interconnects at this wavelength need to be developed for such energy-efficient computing platforms. Phase change materials (PCMs) are good candidates for achieving non-volatile, reconfigurable, zero-static power optical switching. Having bi-stable states under room temperature, a PCM has its permittivity significantly different between its crystalline and amorphous phases. The authors propose to develop a reconfigurable 1 x 2 optical switch by utilizing low loss GeTe PCM to pave the way for the transistor-laser platform at 980 nm. The non-volatility of the proposed device will open up opportunities for other interesting applications such as non-volatile optical memory and the optical equivalence of the field programmable gate array (FPGA).more » « less
-
more » « less
Abstract Phase-change materials (PCMs) offer a compelling platform for active metaoptics, owing to their large index contrast and fast yet stable phase transition attributes. Despite recent advances in phase-change metasurfaces, a fully integrable solution that combines pronounced tuning measures, i.e., efficiency, dynamic range, speed, and power consumption, is still elusive. Here, we demonstrate an in situ electrically driven tunable metasurface by harnessing the full potential of a PCM alloy, Ge2Sb2Te5(GST), to realize non-volatile, reversible, multilevel, fast, and remarkable optical modulation in the near-infrared spectral range. Such a reprogrammable platform presents a record eleven-fold change in the reflectance (absolute reflectance contrast reaching 80%), unprecedented quasi-continuous spectral tuning over 250 nm, and switching speed that can potentially reach a few kHz. Our scalable heterostructure architecture capitalizes on the integration of a robust resistive microheater decoupled from an optically smart metasurface enabling good modal overlap with an ultrathin layer of the largest index contrast PCM to sustain high scattering efficiency even after several reversible phase transitions. We further experimentally demonstrate an electrically reconfigurable phase-change gradient metasurface capable of steering an incident light beam into different diffraction orders. This work represents a critical advance towards the development of fully integrable dynamic metasurfaces and their potential for beamforming applications.
