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Title: NiO Junction Termination Extension for Ga 2 O 3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed
Award ID(s):
2230412 2100504
PAR ID:
10464208
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Page Range / eLocation ID:
386 to 389
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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