Low-temperature plasmas (LTPs) are essential to manufacturing devices in the semiconductor industry, from creating extreme ultraviolet photons used in the most advanced lithography to thin film etching, deposition, and surface modifications. It is estimated that 40%–45% of all process steps needed to manufacture semiconductor devices use LTPs in one form or another. LTPs have been an enabling technology in the multidecade progression of the shrinking of device dimensions, often referred to as Moore’s law. New challenges in circuit and device design, novel materials, and increasing demands to achieve environmentally benign processing technologies require advances in plasma technology beyond the current state-of-the-art. The Department of Energy Office of Science Fusion Energy Sciences held a workshop titled Plasma Science for Microelectronics Nanofabrication in August 2022 to discuss the plasma science challenges and technical barriers that need to be overcome to continue to develop the innovative plasma technologies required to support and advance the semiconductor industry. One of the key outcomes of the workshop was identifying a set of priority research opportunities (PROs) to focus attention on the most strategic plasma science challenges to address to benefit the semiconductor industry. For each PRO, scientific challenges and recommended strategies to address those challenges were identified. This article summarizes the PROs identified by the workshop participants.
- Award ID(s):
- 2020695
- PAR ID:
- 10464993
- Date Published:
- Journal Name:
- Frontiers in Physics
- Volume:
- 10
- ISSN:
- 2296-424X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract The field of low-temperature plasmas (LTPs) excels by virtue of its broad intellectual diversity, interdisciplinarity and range of applications. This great diversity also challenges researchers in communicating the outcomes of their investigations, as common practices and expectations for reporting vary widely in the many disciplines that either fall under the LTP umbrella or interact closely with LTP topics. These challenges encompass comparing measurements made in different laboratories, exchanging and sharing computer models, enabling reproducibility in experiments and computations using traceable and transparent methods and data, establishing metrics for reliability, and in translating fundamental findings to practice. In this paper, we address these challenges from the perspective of LTP standards for measurements, diagnostics, computations, reporting and plasma sources. This discussion on standards, or recommended best practices, and in some cases suggestions for standards or best practices, has the goal of improving communication, reproducibility and transparency within the LTP field and fields allied with LTPs. This discussion also acknowledges that standards and best practices, either recommended or at some point enforced, are ultimately a matter of judgment. These standards and recommended practices should not limit innovation nor prevent research breakthroughs from having real-time impact. Ultimately, the goal of our research community is to advance the entire LTP field and the many applications it touches through a shared set of expectations.
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In many low-temperature plasmas (LTPs), the OH radical and temperature represent key properties of plasma reactivity. However, OH and temperature measurements in weakly ionized LTPs are challenging, due to the low concentration and short lifetime of OH and the abrupt temperature rise caused by fast gas heating. To address such issues, this Letter combined cavity-enhanced absorption spectroscopy (CEAS) with femtosecond (fs) pulses to enable sensitive single-shot broadband measurements of OH and temperature with a time resolution of ∼180 ns in LTPs. Such a combination leveraged several benefits. With the appropriately designed cavity, an absorption gain of ∼66 was achieved, enhancing the actual OH detection limit by ∼55× to the 1011cm-3level (sub-ppm in this work) compared with single-pass absorption. Single-shot measurements were enabled while maintaining a time resolution of ∼180 ns, sufficiently short for detecting OH with a lifetime of ∼100 μs. With the broadband fs laser, ∼34,000 cavity modes were matched with ∼95 modes matched on each CCD pixel bandwidth, such that fs-CEAS became immune to the laser-cavity coupling noise and highly robust across the entire spectral range. Also, the broadband fs laser allowed simultaneous sensing of many absorption features to enable simultaneous multi-parameter measurements with enhanced accuracies.
- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.3389/fphy.2022.1040658
