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This content will become publicly available on September 21, 2024

Title: Reliability of piezoelectric films for MEMS
Abstract

Thin films based on PbZr1−xTixO3and K1−xNaxNbO3are increasingly being commercialized in piezoelectric MEMS due to the comparatively low drive voltages required relative to bulk actuators, as well as the facile approach to making sensor or actuator arrays. As these materials are incorporated into devices, it is critically important that they operate reliably over the lifetime of the system. This paper discusses some of the factors controlling the electrical and electromechanical reliability of lead zirconate titanate (PZT)-based piezoMEMS films. In particular, it will be shown the gradients in the Zr/Ti ratio through the depth of the films are useful in increasing the lifetime of the films under DC electrical stresses.

 
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Award ID(s):
1841453 1841466
NSF-PAR ID:
10467295
Author(s) / Creator(s):
; ; ; ; ; ;
Publisher / Repository:
IOP Publishing Ltd.
Date Published:
Journal Name:
Japanese Journal of Applied Physics
Volume:
62
Issue:
SM
ISSN:
0021-4922
Page Range / eLocation ID:
SM0802
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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