An official website of the United States government
There has been a growing interest in solution-phase routes to thermoelectric materials due to the decreased costs and novel device architectures that these methods enable. Many excellent thermoelectric materials are metal chalcogenide semiconductors and the ability to create soluble metal chalcogenide semiconductor precursors using thiol–amine solvent mixtures was recently demonstrated by others. In this paper, we report the first thermoelectric property measurements on metal chalcogenide thin films made in this manner. We create Cu 2−x Se y S 1−y and Ag-doped Cu 2−x Se y S 1−y thin films and study the interrelationship between their composition and room temperature thermoelectric properties. We find that the precursor annealing temperature affects the metal : chalcogen ratio, and leads to charge carrier concentration changes that affect the Seebeck coefficient and electrical conductivity. Increasing the Se : S ratio increases electrical conductivity and decreases the Seebeck coefficient. We also find that incorporating Ag into the Cu 2−x Se y S 1−y film leads to appreciable improvements in thermoelectric performance by increasing the Seebeck coefficient and decreasing thermal conductivity. Overall, we find that the room temperature thermoelectric properties of these solution-processed materials are comparable to measurements on Cu 2−x Se alloys made via conventional thermoelectric material processing methods. Achieving parity between solution-phase processing and conventional processing is an important milestone and demonstrates the promise of this binary solvent approach as a solution-phase route to thermoelectric materials.
more »
« less
Hybrid Data‐Driven Discovery of High‐Performance Silver Selenide‐Based Thermoelectric Composites
Abstract Optimizing material compositions often enhances thermoelectric performances. However, the large selection of possible base elements and dopants results in a vast composition design space that is too large to systematically search using solely domain knowledge. To address this challenge, a hybrid data‐driven strategy that integrates Bayesian optimization (BO) and Gaussian process regression (GPR) is proposed to optimize the composition of five elements (Ag, Se, S, Cu, and Te) in AgSe‐based thermoelectric materials. Data is collected from the literature to provide prior knowledge for the initial GPR model, which is updated by actively collected experimental data during the iteration between BO and experiments. Within seven iterations, the optimized AgSe‐based materials prepared using a simple high‐throughput ink mixing and blade coating method deliver a high power factor of 2100 µW m−1K−2, which is a 75% improvement from the baseline composite (nominal composition of Ag2Se1). The success of this study provides opportunities to generalize the demonstrated active machine learning technique to accelerate the development and optimization of a wide range of material systems with reduced experimental trials.
more »
« less
- Award ID(s):
- 1747685
- PAR ID:
- 10469420
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Materials
- Volume:
- 35
- Issue:
- 47
- ISSN:
- 0935-9648
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
The layered transition metal chalcogenides MCrX2 (M = Ag, Cu; X = S, Se, Te) are of interest for energy storage because chemically Li-substituted analogs were reported as superionic Li+ conductors. The coexistence of fast ion transport and reducible transition metal and chalcogen elements suggests that this family may offer multifunctional capability for electrochemical storage. Here, we investigate the electrochemical reduction of AgCrSe2 and CuCrSe2 in non-aqueous Li- and Na-ion electrolytes using electrochemical measurements coupled with ex situ characterization (scanning electron microscopy, energy-dispersive spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy). Both compounds delivered high initial specific capacities (~ 560 mAh/g), corresponding to 6.64 and 5.73 Li+/e- per formula unit for AgCrSe2 and CuCrSe2, respectively. We attribute this difference to distinct reduction pathways: 1) Li+ intercalation to form LiCrSe2 and extruded Ag or Cu, 2) conversion of LiCrSe2 to Li2Se, and 3) formation of an Ag-Li alloy at the lowest potential, operative only in AgCrSe2. Consistent with this proposed mechanism, step 3 was absent during reduction of AgCrSe2 in a Na-ion electrolyte since Ag does not alloy with Na. These results demonstrate the complex reduction chemistry of MCrX2 in the presence of alkali ions, providing insights into the use of MCrX2 materials as alkali ion superionic conductors or high capacity electrodes for lithium or sodium-ion type batteries.more » « less
-
Flexible thermoelectric generators (TEGs) have shown immense potential for serving as a power source for wearable electronics and the Internet of Things. A key challenge preventing large-scale application of TEGs lies in the lack of a high-throughput processing method, which can sinter thermoelectric (TE) materials rapidly while maintaining their high thermoelectric properties. Herein, we integrate high-throughput experimentation and Bayesian optimization (BO) to accelerate the discovery of the optimum sintering conditions of silver–selenide TE films using an ultrafast intense pulsed light (flash) sintering technique. Due to the nature of the high-dimensional optimization problem of flash sintering processes, a Gaussian process regression (GPR) machine learning model is established to rapidly recommend the optimum flash sintering variables based on Bayesian expected improvement. For the first time, an ultrahigh-power factor flexible TE film (a power factor of 2205 μW m −1 K −2 with a zT of 1.1 at 300 K) is demonstrated with a sintering time less than 1.0 second, which is several orders of magnitude shorter than that of conventional thermal sintering techniques. The films also show excellent flexibility with 92% retention of the power factor (PF) after 10 3 bending cycles with a 5 mm bending radius. In addition, a wearable thermoelectric generator based on the flash-sintered films generates a very competitive power density of 0.5 mW cm −2 at a temperature difference of 10 K. This work not only shows the tremendous potential of high-performance and flexible silver–selenide TEGs but also demonstrates a machine learning-assisted flash sintering strategy that could be used for ultrafast, high-throughput and scalable processing of functional materials for a broad range of energy and electronic applications.more » « less
-
Over the past decade, Ag 2 Se has attracted increasing attention due to its potentially excellent thermoelectric (TE) performance as an n-type semiconductor. It has been considered a promising alternative to Bi–Te alloys and other commonly used yet toxic and/or expensive TE materials. To optimize the TE performance of Ag 2 Se, recent research has focused on fabricating nanosized Ag 2 Se. However, synthesizing Ag 2 Se nanoparticles involves energy-intensive and time-consuming techniques with poor yield of final product. In this work, we report a low-cost, solution-processed approach that enables the formation of Ag 2 Se thin films from Cu 2−x Se template films via cation exchange at room temperature. Our simple two-step method involves fabricating Cu 2−x Se thin films by the thiol-amine dissolution of bulk Cu 2 Se, followed by soaking Cu 2−x Se films in AgNO 3 solution and annealing to form Ag 2 Se. We report an average power factor (PF) of 617 ± 82 μW m −1 K −2 and a corresponding ZT value of 0.35 at room temperature. We obtained a maximum PF of 825 μW m −1 K −2 and a ZT value of 0.46 at room temperature for our best-performing Ag 2 Se thin-film after soaking for 5 minutes. These high PFs have been achieved via full solution processing without hot-pressing.more » « less
-
Abstract Bismuth telluride is the working material for most Peltier cooling devices and thermoelectric generators. This is because Bi2Te3(or more precisely its alloys with Sb2Te3for p‐type and Bi2Se3for n‐type material) has the highest thermoelectric figure of merit,zT, of any material around room temperature. Since thermoelectric technology will be greatly enhanced by improving Bi2Te3or finding a superior material, this review aims to identify and quantify the key material properties that make Bi2Te3such a good thermoelectric. The largezTcan be traced to the high band degeneracy, low effective mass, high carrier mobility, and relatively low lattice thermal conductivity, which all contribute to its remarkably high thermoelectric quality factor. Using literature data augmented with newer results, these material parameters are quantified, giving clear insight into the tailoring of the electronic band structure of Bi2Te3by alloying, or reducing thermal conductivity by nanostructuring. For example, this analysis clearly shows that the minority carrier excitation across the small bandgap significantly limits the thermoelectric performance of Bi2Te3, even at room temperature, showing that larger bandgap alloys are needed for higher temperature operation. Such effective material parameters can also be used for benchmarking future improvements in Bi2Te3or new replacement materials.more » « less
