Strain engineering is a natural route to control the electronic and optical properties of two-dimensional (2D) materials. Recently, 2D semiconductors have also been demonstrated as an intriguing host of strain-induced quantum-confined emitters with unique valley properties inherited from the host semiconductor. Here, we study the continuous and reversible tuning of the light emitted by such localized emitters in a monolayer tungsten diselenide embedded in a van der Waals heterostructure. Biaxial strain is applied on the emitters via strain transfer from a lead magnesium niobate–lead titanate (PMN-PT) piezoelectric substrate. Efficient modulation of the emission energy of several localized emitters up to 10 meV has been demonstrated on application of a voltage on the piezoelectric substrate. Further, we also find that the emission axis rotates by
A general transfer method is presented for the heterogeneous integration of different photonic and electronic materials systems and devices into a single substrate. Called BLAST, for Bond, Lift, Align, and Slide Transfer, the process works at wafer scale and offers precision alignment, high yield, varying topographies, and suitability for subsequent lithographic processing. BLAST's capabilities is demonstrated by integrating both GaAs and GaN µLEDs with silicon photovoltaics to fabricate optical wireless integrated circuits that up‐convert photons from the red to the blue. The study also shows that BLAST can be applied to a variety of other devices and substrates, including CMOS electronics, vertical cavity surface emitting lasers (VCSELs), and 2D materials. BLAST further enables the modularization of optoelectronic microsystems, where optical devices fabricated on one material substrate can be lithographically integrated with electronic devices on a different substrate in a scalable process.
more » « less- NSF-PAR ID:
- 10480107
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 9
- Issue:
- 12
- ISSN:
- 2199-160X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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as the magnitude of the biaxial strain is varied on these emitters. These results elevate the prospect of using all electrically controlled devices where the property of the localized emitters in a 2D host can be engineered with elastic fields for an integrated opto-electronics and nano-photonics platform. -
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