A new record‐high room‐temperature electron Hall mobility (
The large‐area synthesis of high‐quality MoS2plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)‐grown MoS2require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high‐quality monolayer MoS2with the domain size up to 120 µm by metal‐organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low‐substrate temperature, the MOCVD‐grown MoS2exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm2V−1s−1at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS2growth process via a geometric model of the MoS2flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.
more » « less- NSF-PAR ID:
- 10450861
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Small Methods
- Volume:
- 5
- Issue:
- 6
- ISSN:
- 2366-9608
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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