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This content will become publicly available on November 15, 2024

Title: Temperature dependence of dielectric nonlinearity of BaTiO 3 ceramics

In many commercially utilized ferroelectric materials, the motion of domain walls is an important contributor to the functional dielectric and piezoelectric responses. This paper compares the temperature dependence of domain wall motion for BaTiO3 ceramics with different grain sizes, point defect concentrations, and formulations. The grain boundaries act as significant pinning points for domain wall motion such that fine-grained materials show smaller extrinsic contributions to the properties below the Curie temperature and lower residual ferroelectric contributions immediately above the Curie temperature. Oxygen vacancy point defects make a modest change in the extrinsic contributions of undoped BaTiO3 ceramics. In formulated BaTiO3, extrinsic contributions to the dielectric response were suppressed over a wide temperature range. It is believed this is due to a combination of reduced grain size, the existence of a core-shell microstructure, and a reduction in domain wall continuity over the grain boundaries.

 
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Award ID(s):
1841466 1841453
NSF-PAR ID:
10480943
Author(s) / Creator(s):
;
Publisher / Repository:
OAE Publishing
Date Published:
Journal Name:
Microstructures
Volume:
3
Issue:
4
ISSN:
2770-2995
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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