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Photonic integrated circuits (PICs) are vital for developing affordable, high-performance optoelectronic devices that can be manufactured at an industrial scale, driving innovation and efficiency in various applications. Optical loss of modes in thin film waveguides and devices is a critical measure of their performance. Thin film growth, lithography, masking, and etching processes are imperfect processes that introduce significant sidewall and top-surface roughness and cause dominating optical losses in waveguides and photonic structures. This roughness, as perturbations couple light from guided to far-field radiation modes, leads to scattering losses that can be estimated from theoretical models. Typically, with UV-based lithography, sidewall roughness is significantly larger than wafer-top surface roughness. Atomic force microscopy (AFM) imaging measurement gives a 3D and high-resolution roughness profile, but the measurement is inconvenient, costly, and unscalable for large-scale PICs and at wafer-scale. Here, we evaluate the sidewall roughness profile based on 2D high-resolution scanning electron microscope (SEM) imaging. We characterized the loss on two homemade nitride and oxide films on 3-inch silicon wafers with 12 waveguide devices on each and correlated the scattering loss estimated from a 2D image-based sidewall profile and theoretical Payne model. The lowest loss of guided fundamental transverse electric (TE0) mode is found at 0.075 dB/cm at 633 nm across 24 devices, a record at visible wavelength. Our work shows 100% success (edge continuity span exceeding 95% of image width/height) in edge detection in image processing of all images to estimate autocorrelation function and optical mode loss. These demonstrations offer valuable insights into waveguide sidewall roughness and a comparison of experimental and 2D SEM image processing based loss estimations with applications in loss characterization at wafer-scale PICs.
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Non‐destructive thickness measurement of optically scattering polymer films using image processing
Abstract We establish a sample‐ and data‐processing pipeline that allows for high‐throughput optical microscope measurement of porous films, provided they are sufficiently optically scattering. Here, self‐limiting electrospray deposition (SLED) is used to manufacture scattering films of different morphologies. This technique compensates for the scattering of the films through background subtraction of the reflection image with the transmission image. This process is implemented through a combination of an ImageJ and MATLAB data pipeline; the Canny edge‐detector is used as the image‐processing algorithm to identify the boundaries of the film. This process is verified against manually measured images; a comparative study between cross‐sectional scanning electron microscopy (where scattering effects are diminished) and optical microscopy also verifies that our optical microscopy technique can be used to consistently, non‐destructively measure film thickness regardless of film morphology. In addition, this technique can be used in combination with dense film measurements to measure film porosity.
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- PAR ID:
- 10482262
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Engineering Reports
- Volume:
- 6
- Issue:
- 9
- ISSN:
- 2577-8196
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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