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The efficient, large-scale generation and control of photonic modes guided by van der Waals materials remains as a challenge despite their potential for on-chip photonic circuitry. We report three-atom-thick waveguides—δ waveguides—based on wafer-scale molybdenum disulfide (MoS2) monolayers that can guide visible and near-infrared light over millimeter-scale distances with low loss and an efficient in-coupling. The extreme thinness provides a light-trapping mechanism analogous to a δ-potential well in quantum mechanics and enables the guided waves that are essentially a plane wave freely propagating along the in-plane, but confined along the out-of-plane, direction of the waveguide. We further demonstrate key functionalities essential for two-dimensional photonics, including refraction, focusing, grating, interconnection, and intensity modulation, by integrating thin-film optical components with δ waveguides using microfabricated dielectric, metal, or patterned MoS2.
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Wafer-scale waveguide sidewall roughness scattering loss characterization by image processing
Photonic integrated circuits (PICs) are vital for developing affordable, high-performance optoelectronic devices that can be manufactured at an industrial scale, driving innovation and efficiency in various applications. Optical loss of modes in thin film waveguides and devices is a critical measure of their performance. Thin film growth, lithography, masking, and etching processes are imperfect processes that introduce significant sidewall and top-surface roughness and cause dominating optical losses in waveguides and photonic structures. This roughness, as perturbations couple light from guided to far-field radiation modes, leads to scattering losses that can be estimated from theoretical models. Typically, with UV-based lithography, sidewall roughness is significantly larger than wafer-top surface roughness. Atomic force microscopy (AFM) imaging measurement gives a 3D and high-resolution roughness profile, but the measurement is inconvenient, costly, and unscalable for large-scale PICs and at wafer-scale. Here, we evaluate the sidewall roughness profile based on 2D high-resolution scanning electron microscope (SEM) imaging. We characterized the loss on two homemade nitride and oxide films on 3-inch silicon wafers with 12 waveguide devices on each and correlated the scattering loss estimated from a 2D image-based sidewall profile and theoretical Payne model. The lowest loss of guided fundamental transverse electric (TE0) mode is found at 0.075 dB/cm at 633 nm across 24 devices, a record at visible wavelength. Our work shows 100% success (edge continuity span exceeding 95% of image width/height) in edge detection in image processing of all images to estimate autocorrelation function and optical mode loss. These demonstrations offer valuable insights into waveguide sidewall roughness and a comparison of experimental and 2D SEM image processing based loss estimations with applications in loss characterization at wafer-scale PICs.
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- Award ID(s):
- 2013771
- PAR ID:
- 10588736
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optics Express
- Volume:
- 33
- Issue:
- 10
- ISSN:
- 1094-4087; OPEXFF
- Format(s):
- Medium: X Size: Article No. 20645
- Size(s):
- Article No. 20645
- Sponsoring Org:
- National Science Foundation
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