Theoretical and experimental investigations of various exfoliated samples taken from layered In4Se3crystals are performed. In spite of the ionic character of interlayer interactions in In4Se3and hence much higher calculated cleavage energies compared to graphite, it is possible to produce few‐nanometer‐thick flakes of In4Se3by mechanical exfoliation of its bulk crystals. The In4Se3flakes exfoliated on Si/SiO2have anisotropic electronic properties and exhibit field‐effect electron mobilities of about 50 cm2 V−1 s−1at room temperature, which are comparable with other popular transition metal chalcogenide (TMC) electronic materials, such as MoS2and TiS3. In4Se3devices exhibit a visible range photoresponse on a timescale of less than 30 ms. The photoresponse depends on the polarization of the excitation light consistent with symmetry‐dependent band structure calculations for the most expected
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Atomically thin, few‐layered membranes of oxides show unique physical and chemical properties compared to their bulk forms. Manganese oxide (Mn3O4) membranes are exfoliated from the naturally occurring mineral Hausmannite and used to make flexible, high‐performance nanogenerators (NGs). An enhanced power density in the membrane NG is observed with the best‐performing device showing a power density of 7.99 mW m−2compared to 1.04 µW m−2in bulk Mn3O4. A sensitivity of 108 mV kPa−1for applied forces <10 N in the membrane NG is observed. The improved performance of these NGs is attributed to enhanced flexoelectric response in a few layers of Mn3O4. Using first‐principles calculations, the flexoelectric coefficients of monolayer and bilayer Mn3O4are found to be 50–100 times larger than other 2D transition metal dichalcogenides (TMDCs). Using a model based on classical beam theory, an increasing activation of the bending mode with decreasing thickness of the oxide membranes is observed, which in turn leads to a large flexoelectric response. As a proof‐of‐concept, flexible NGs using exfoliated Mn3O4membranes are made and used in self‐powered paper‐based devices. This research paves the way for the exploration of few‐layered membranes of other centrosymmetric oxides for application as energy harvesters.
more » « less- NSF-PAR ID:
- 10482794
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Small
- ISSN:
- 1613-6810
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract ac cleavage plane. These results demonstrate that mechanical exfoliation of layered ionic In4Se3crystals is possible, while the fast anisotropic photoresponse makes In4Se3a competitive electronic material, in the TMC family, for emerging optoelectronic device applications. -
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