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1. Dataset of optical and electronic properties for MoS2-graphene vertical heterostructures and MoS2-graphene-Au heterointerfaces

   https://doi.org/10.1016/j.dib.2023.109341  

   Gupta, Sanju ; Pimenidou, Panagiota ; Garcia, Miguel ; Das, Shivanshi ; Dimakis, Nicholas ( August 2023 , Data in Brief)
2. Graphene/MoS2/SiOx memristive synapses for linear weight update

   https://doi.org/10.1038/s41699-023-00388-y  

   Krishnaprasad, Adithi ; Dev, Durjoy ; Shawkat, Mashiyat Sumaiya ; Martinez-Martinez, Ricardo ; Islam, Molla Manjurul ; Chung, Hee-Suk ; Bae, Tae-Sung ; Jung, Yeonwoong ; Roy, Tania ( December 2023 , npj 2D Materials and Applications)

   Memristors for neuromorphic computing have gained prominence over the years for implementing synapses and neurons due to their nano-scale footprint and reduced complexity. Several demonstrations show two-dimensional (2D) materials as a promising platform for the realization of transparent, flexible, ultra-thin memristive synapses. However, unsupervised learning in a spiking neural network (SNN) facilitated by linearity and symmetry in synaptic weight update has not been explored thoroughly using the 2D materials platform. Here, we demonstrate that graphene/MoS₂/SiO_x/Ni synapses exhibit ideal linearity and symmetry when subjected to identical input pulses, which is essential for their role in online training of neural networks. The linearity in weight update holds for a range of pulse width, amplitude and number of applied pulses. Our work illustrates that the mechanism of switching in MoS₂-based synapses is through conductive filaments governed by Poole-Frenkel emission. We demonstrate that the graphene/MoS₂/SiO_x/Ni synapses, when integrated with a MoS₂-based leaky integrate-and-fire neuron, can control the spiking of the neuron efficiently. This work establishes 2D MoS₂as a viable platform for all-memristive SNNs.

    

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3. Adhesion Energies of 2D Graphene and MoS2 to Silicon and Metal Substrates

   Jorge Torres, Yisi Zhu ( January 2018 , Physica status solidi)
4. MoS2-graphene heterostructures as efficient organic compounds sensing 2D materials

   https://doi.org/10.1016/j.carbon.2018.10.079  

   Pham, Tung ; Ramnani, Pankaj ; Villarreal, Claudia C. ; Lopez, Jhoann ; Das, Protik ; Lee, Ilkeun ; Neupane, Mahesh R. ; Rheem, Youngwoo ; Mulchandani, Ashok ( February 2019 , Carbon)
5. Tuning transport across MoS2/graphene interfaces via as-grown lateral heterostructures

   https://doi.org/10.1038/s41699-020-0144-0  

   Subramanian, Shruti ; Xu, Ke ; Wang, Yuanxi ; Moser, Simon ; Simonson, Nicholas A. ; Deng, Donna ; Crespi, Vincent H. ; Fullerton-Shirey, Susan K. ; Robinson, Joshua A. ( May 2020 , npj 2D Materials and Applications)

   An unexploited property of graphene-based heterojunctions is the tunable doping of the junction via electrostatic gating. This unique property may be key in advancing electronic transport across interfaces with semiconductors. Here, we engineer transport in semiconducting TMDs by constructing a lateral heterostructure with epitaxial graphene and tuning its intrinsic doping to form ap–njunction between the graphene and the semiconducting TMDs. Graphene grown on SiC (epitaxial graphene) is intrinsically doped via substrate polarization without the introduction of an external dopant, thus enabling a platform for pristine heterostructures with a target band alignment. We demonstrate an electrostatically tunable graphene/MoS₂p–njunction with >20× reduction and >10× increased tunability in contact resistance (R_c) compared with metal/TMD junctions, attributed to band alignment engineering and the tunable density of states in graphene. This unique concept provides improved control over transport across 2Dp–njunctions.

    

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