An official website of the United States government
Convergence of high-performance silicon photonics and electronics, monolithically integrated in state-of-the-art CMOS platforms, is the holy grail for enabling the ultimate efficiencies, performance, and scaling of electronic-photonic systems-on-chip. It requires the emergence of platforms that combine state-of-the-art RF transistors with optimized silicon photonics, and a generation of photonic device technology with ultralow energies, increased operating spectrum, and the elimination of power-hungry thermal tuning. In this paper, in a co-optimized monolithic electronics-photonics platform (GlobalFoundries 45CLO), we turn the metal-oxide-semiconductor (MOS) field-effect transistor’s basic structure into a novel, highly efficient MOS capacitor ring modulator. It has the smallest ring cavity (1.5 μm radius), largest corresponding spur-free free spectral range ( FSR = 8.5 THz ), and record 30 GHz/V shift efficiency in the O-band among silicon modulators demonstrated to date. With 1 V pp RF drive, we show an open optical eye while electro-optically tuning the modulator to track over 400 pm (69 GHz) change in the laser wavelength (using 2.5 V DC range). A 90 GHz maximum electro-optic resonance shift is demonstrated with under 40 nW of power, providing a strong nonthermal tuning mechanism in a CMOS photonics platform. The modulator has a separately optimized body layer but shares the gate device layer and the gate oxide with 45 nm transistors, while meeting all CMOS manufacturability design rules. This type of convergent evolution of electronics and photonics may be the future of platforms for high-performance systems-on-chip.
more »
« less
Sub-volt high-speed silicon MOSCAP microring modulator driven by high-mobility conductive oxide
Abstract Silicon microring modulator plays a critical role in energy-efficient optical interconnect and optical computing owing to its ultra-compact footprint and capability for on-chip wavelength-division multiplexing. However, existing silicon microring modulators usually require more than 2 V of driving voltage (Vpp), which is limited by both material properties and device structures. Here, we present a metal-oxide-semiconductor capacitor microring modulator through heterogeneous integration between silicon photonics and titanium-doped indium oxide, which is a high-mobility transparent conductive oxide (TCO) with a strong plasma dispersion effect. The device is co-fabricated by Intel’s photonics fab and our in-house TCO patterning processes, which exhibits a high modulation efficiency of 117 pm/V and consequently can be driven by a very low Vppof 0.8 V. At a 11 GHz modulation bandwidth where the modulator is limited by the RC bandwidth, we obtained 25 Gb/s clear eye diagrams with energy efficiency of 53 fJ/bit.
more »
« less
- Award ID(s):
- 2240352
- PAR ID:
- 10487868
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 15
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
We propose an on-chip triply resonant electro-optic modulator architecture for RF-to-optical signal conversion and provide a detailed theoretical analysis of the optimal “circuit-level” device geometries and their performance limits. The designs maximize the RF-optical conversion efficiency through simultaneous resonant enhancement of the RF drive signal, a continuous-wave (CW) optical pump, and the generated optical sideband. The optical pump and sideband are resonantly enhanced in respective supermodes of a two-coupled-cavity optical resonator system, while the RF signal can be enhanced in addition by an LC circuit formed by capacitances of the optical resonator active regions and (integrated) matching inductors. We show that such designs can offer 15-50 dB improvement in conversion efficiency over conventional microring modulators. In the proposed configurations, the photon lifetime (resonance linewidth) limits the instantaneous RF bandwidth of the electro-optic response but does not limit its central RF frequency. The latter is set by the coupling strength between the two coupled cavities and is not subject to the photon lifetime constraint inherent to conventional singly resonant microring modulators. This feature enables efficient operation at high RF carrier frequencies without a reduction in efficiency commonly associated with the photon lifetime limit and accounts for 10-30 dB of the total improvement. Two optical configurations of the modulator are proposed: a “basic” configuration with equal Q-factors in both supermodes, most suitable for narrowband RF signals, and a “generalized” configuration with independently tailored supermode Q-factors that supports a wider instantaneous bandwidth. A second significant 5-20 dB gain in modulation efficiency is expected from RF drive signal enhancement by integrated LC resonant matching, leading to the total expected improvement of 15-50 dB. Previously studied triply-resonant modulators, with coupled longitudinal (across the free spectral range (FSR)) modes, have large resonant mode volume for typical RF frequencies, which limits the interaction between the optical and RF fields. In contrast, the proposed modulators support maximally tightly confined resonant modes, with strong coupling between the mode fields, which increases and maintains high device efficiency across a range of RF frequencies. The proposed modulator architecture is compact, efficient, capable of modulation at high RF carrier frequencies and can be applied to any cavity design or modulation mechanism. It is also well suited to moderate Q, including silicon, implementations, and may be enabling for future CMOS RF-electronic-photonic systems on chip.more » « less
-
Growing interconnect bandwidth demand in large datacenters requires energy-efficient optical transceivers that operate with four-level pulse amplitude modulation (PAM4) to enable high per-wavelength data rates. Further increases in bandwidth density is possible by leveraging wavelength-division multiplexing (WDM), which optical link architectures based on silicon photonic microring modulators (MRMs) and drop filters inherently enable. This paper presents high-speed PAM4 transmitter and receiver front-ends implemented in a 28nm CMOS process that are co-designed with these silicon photonic optical devices to enable energy-efficient operation. The transmitter utilizes an optical digital-to-analog converter (DAC) approach with two PAM2 AC-coupled pulsed-cascode high-swing voltage-mode output stages to drive the MRM MSB/LSB segments. A 3.42Vppd output swing is achieved when operating at 80Gb/s PAM4 with an energy efficiency of 3.66pJ/bit. The receiver front-end interfaces with a silicon-germanium avalanche photodiode (APD) and utilizes a low-bandwidth input transimpedance amplifier followed by continuous-time linear equalizer and variable-gain amplifier stages. Biasing the APD to realize a gain of 2 allows for -7dBm optical modulation amplitude (OMA) sensitivity at 56Gb/s PAM4 with a BER=10-4 and an energy efficiency of 1.61pJ/bit. Experimental verification of the full PAM4 transceiver at 50Gb/s operation shows -4.66dBm OMA sensitivity at a BER~4x10-4.more » « less
-
We experimentally demonstrate the heterogeneous integration of ferroelectric hafnium zirconium oxide (HZO) with a silicon photonic microring resonator and demonstrate two non-volatile states for data storage by switching the polarization of HZO. Capped by transparent conducting titanium doped indium oxide (ITiO), the device functions as a metal insulator semiconductor (MIS) capacitor and utilizes the refractive index modulation via carrier (hole) accumulation and the effect of trapped charges at the ferroelectric–silicon interface to create the non-volatile binary switching states. In contrast to electronic devices where trapped charges at the silicon–ferroelectric interface reduce the memory window, in our ferrophotonic device, trapped charges amplify the refractive index difference in the binary states due to effective screening of the silicon in inversion. By switching the applied bias from negative to positive, the optical power transmitted through the ring switches with 3.5 dB output power difference between the non-volatile set and reset states and 40 pJ switching energy at ±8 V. Preliminary results suggest a path toward achieving sub-1 V non-volatile ferrophotonic switching.more » « less
-
Abstract Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic–photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum information, and microwave photonics. Success in these fields usually requires highly scalable photonic switching units as essential building blocks. Current photonic switches, however, mainly rely on materials with weak, volatile thermo‐optic or electro‐optic modulation effects, resulting in large footprints and high energy consumption. As a promising alternative, chalcogenide phase‐change materials (PCMs) exhibit strong optical modulation in a static, self‐holding fashion, but the scalability of present PCM‐integrated photonic applications is still limited by the poor optical or electrical actuation approaches. Here, with phase transitions actuated by in situ silicon PIN diode heaters, scalable nonvolatile electrically reconfigurable photonic switches using PCM‐clad silicon waveguides and microring resonators are demonstrated. As a result, intrinsically compact and energy‐efficient switching units operated with low driving voltages, near‐zero additional loss, and reversible switching with high endurance are obtained in a complementary metal‐oxide‐semiconductor (CMOS)‐compatible process. This work can potentially enable very large‐scale CMOS‐integrated programmable electronic–photonic systems such as optical neural networks and general‐purpose integrated photonic processors.more » « less
