Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence properties, but strained silicon-vacancy centers have been shown to operate at temperatures beyond 1 K without phonon-mediated decoherence. In this work, we combine high-stress silicon-nitride thin films with diamond nanostructures to reproducibly create statically strained silicon-vacancy color centers (mean ground state splitting of 608 GHz) with strain magnitudes of ∼4×10−4. Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within the measured sample at elevated temperatures (1.5 K) without any degradation of their spin properties. This method offers a scalable approach to fabricate high-temperature operation quantum memories. Beyond silicon-vacancy centers, this method is sufficiently general that it can be easily extended to other platforms as well.
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Photodarkening, Photobrightening, and the Role of Color Centers in Emerging Applications of Lanthanide-Based Upconverting Nanomaterials
Upconverting nanoparticles (UCNPs) compose a class of luminescent materials that utilize the unique wavelength-converting properties of lanthanide (Ln) ions for light-harvesting applications, photonics technologies, and biological imaging and sensing experiments. Recent advances in UCNP design have shed light on the properties of local color centers, both intrinsic and controllably induced, within these materials and their potential influence on UCNP photophysics. In this review, we describe fundamental studies of color centers in Ln-based materials, including research into their origins and their roles in observed photodarkening and photobrightening mechanisms. We place particular focus on the new functionalities that are enabled by harnessing the properties of color centers within Ln-doped nanocrystals, illustrated through applications in afterglow-based bioimaging, X-ray detection, all-inorganic nanocrystal photoswitching, and fully rewritable optical patterning and memory.
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- Award ID(s):
- 2203510
- PAR ID:
- 10490726
- Publisher / Repository:
- Annual Reviews
- Date Published:
- Journal Name:
- Annual Review of Physical Chemistry
- Volume:
- 74
- Issue:
- 1
- ISSN:
- 0066-426X
- Page Range / eLocation ID:
- 415 to 438
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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