Thin-film lithium niobate is an attractive integrated photonics platform due to its low optical loss and favorable optical nonlinear and electro-optic properties. However, in applications such as second harmonic generation, frequency comb generation, and microwave-to-optics conversion, the device performance is strongly impeded by the photorefractive effect inherent in thin-film lithium niobate. In this paper, we show that the dielectric cladding on a lithium niobate microring resonator has a significant influence on the photorefractive effect. By removing the dielectric cladding layer, the photorefractive effect in lithium niobate ring resonators can be effectively mitigated. Our work presents a reliable approach to control the photorefractive effect on thin-film lithium niobate and will further advance the performance of integrated classical and quantum photonic devices based on thin-film lithium niobate.
more »
« less
This content will become publicly available on December 1, 2025
Surface modification and coherence in lithium niobate SAW resonators
Abstract Lithium niobate is a promising material for developing quantum acoustic technologies due to its strong piezoelectric effect and availability in the form of crystalline thin films of high quality. However, at radio frequencies and cryogenic temperatures, these resonators are limited by the presence of decoherence and dephasing due to two-level systems. To mitigate these losses and increase device performance, a more detailed picture of the microscopic nature of these loss channels is needed. In this study, we fabricate several lithium niobate acoustic wave resonators and apply different processing steps that modify their surfaces. These treatments include argon ion sputtering, annealing, and acid cleans. We characterize the effects of these treatments using three surface-sensitive measurements: cryogenic microwave spectroscopy measuring density and coupling of TLS to mechanics, X-ray photoelectron spectroscopy and atomic force microscopy. We learn from these studies that, surprisingly, increases of TLS density may accompany apparent improvements in the surface quality as probed by the latter two approaches. Our work outlines the importance that surfaces and fabrication techniques play in altering acoustic resonator coherence, and suggests gaps in our understanding as well as approaches to address them.
more »
« less
- Award ID(s):
- 1941826
- PAR ID:
- 10503420
- Publisher / Repository:
- Scientific Reports
- Date Published:
- Journal Name:
- Scientific Reports
- Volume:
- 14
- Issue:
- 1
- ISSN:
- 2045-2322
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Thin film bulk acoustic wave resonators (FBARs) leveraging sputtered aluminum nitride (AlN) and scandium aluminum nitride (ScAlN) films, are a leading commercial solution for compact radio frequency (RF) filters in mobile devices. However, as 5G/6G bands extend beyond 6 GHz, achieving the required thinner piezoelectric film thicknesses below 500 nm presents a significant challenge to high-quality sputtering, resulting in a moderate quality factor (Q). Additionally, AlN/ScAlN platforms are limited by moderate electromechanical coupling (k2), restricting bandwidth. More recently, ultra-thin transferred single-crystal piezoelectric lithium niobate (LN) has enabled lateral field excited resonators (XBAR) at 10-30 GHz. While these devices boast a high Q and k2, they face challenges with low capacitance density, large footprint, and significant electromagnetic (EM) effects. On the other hand, thickness-field excited LN FBARs face challenges with bottom electrode integration. In this work, we implement a transferred LN on aluminum FBAR platform on sapphire wafers with an intermediate amorphous silicon layer without the need for a patterned bottom electrode. The resonators show first order symmetric mode (S1) at 10.5 GHz with a 3-dB series resonance Q of 38 and k2 of 14.1%, alongside third order symmetric mode (S3) at 27 GHz with a 3-dB series resonance Q of 22 and a high k2 of 11.3%. Further analysis shows that higher Q could be achieved by adjusting the low-loss piezoelectric to lossy metal volume ratio.more » « less
-
Abstract It is essential to understand the nanoscale structure and chemistry of energy storage materials due to their profound impact on battery performance. However, it is often challenging to characterize them at high resolution, as they are often fundamentally altered by sample preparation methods. Here, we use the cryogenic lift-out technique in a plasma-focused ion beam (PFIB)/scanning electron microscope (SEM) to prepare air-sensitive lithium metal to understand ion-beam damage during sample preparation. Through the use of cryogenic transmission electron microscopy, we find that lithium was not damaged by ion-beam milling although lithium oxide shells form in the PFIB/SEM chamber, as evidenced by diffraction information from cryogenic lift-out lithium lamellae prepared at two different thicknesses (130 and 225 nm). Cryogenic energy loss spectroscopy further confirms that lithium was oxidized during the process of sample preparation. The Ellingham diagram suggests that lithium can react with trace oxygen gas in the FIB/SEM chamber at cryogenic temperatures, and we show that liquid oxygen does not contribute to the oxidation of lithium process. Our results suggest the importance of understanding how cryogenic lift-out sample preparation has an impact on the high-resolution characterization of reactive battery materials.more » « less
-
Abstract Superconducting resonators are widely used in many applications such as qubit readout for quantum computing, and kinetic inductance detectors. These resonators are susceptible to numerous loss and noise mechanisms, especially the dissipation due to two‐level systems (TLS) which become the dominant source of loss in the few‐photon and low temperature regime. In this study, capacitively‐coupled aluminum half‐wavelength coplanar waveguide resonators are investigated. Surprisingly, the loss of the resonators is observed to decrease with a lowering temperature at low excitation powers and temperatures below the TLS saturation. This behavior is attributed to the reduction of the TLS resonant response bandwidth with decreasing temperature and power to below the detuning between the TLS and the resonant photon frequency in a discrete ensemble of TLS. When response bandwidths of TLS are smaller than their detunings from the resonance, the resonant response and thus the loss is reduced. At higher excitation powers, the loss follows a logarithmic power dependence, consistent with predictions from the generalized tunneling model (GTM). A model combining the discrete TLS ensemble with the GTM is proposed and matches the temperature and power dependence of the measured internal loss of the resonator with reasonable parameters.more » « less
-
Second-harmonic generation (SHG) plays a significant role in modern photonic technology. Integrated photonic resonators fabricated with thin-film lithium niobate can achieve ultrahigh efficiencies by combining small mode volumes with high material nonlinearity. Cavity-enhanced SHG requires accurate phase and frequency matching conditions, where fundamental and second-harmonic wavelengths are both on resonance. However, this double-resonance condition can typically be realized only at a fixed random wavelength due to the high sensitivity of photonic resonances to the device geometry and fabrication variations. Here, we propose a novel method that can achieve the double-resonance condition over a large wavelength range. We combine thermal-optic and electro-optic (EO) effects to realize the separate tuning of fundamental and second-harmonic resonances. We demonstrated that the optimum SHG efficiency can be maintained over a wavelength range that exceeds the limit achievable with only thermal tuning. With this flexible tuning capability, we further show the precise alignment of SHG wavelengths of two separate thin-film lithium niobate resonators without sacrificing efficiencies.more » « less
An official website of the United States government
