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Title: Ferroelectric Schottky diodes of CuInP2S6 nanosheet

Ferroelectricity in van der Waals (vdW) layered material has attracted a great deal of interest recently. CuInP2S6 (CIPS), the only vdW layered material whose ferroelectricity in the bulk was demonstrated by direct polarization measurements, was shown to remain ferroelectric down to a thickness of a few nanometers. However, its ferroelectric properties have just started to be explored in the context of potential device applications. We report here the preparation and measurements of metal-ferroelectric semiconductor-metal heterostructures using nanosheets of CIPS obtained by mechanical exfoliation. Four bias voltage and polarization dependent resistive states were observed in the current–voltage characteristics, which we attribute to the formation of ferroelectric Schottky diode, along with switching behavior.

 
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Award ID(s):
2039351 1539916
NSF-PAR ID:
10504526
Author(s) / Creator(s):
; ; ; ; ; ;
Publisher / Repository:
AIP Publishing
Date Published:
Journal Name:
Applied Physics Letters
Volume:
123
Issue:
14
ISSN:
0003-6951
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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