Full Heusler compounds have long been discovered as exceptional n-type thermoelectric materials. However, no p-type compounds could match the high n-type figure of merit ( ZT ). In this work, based on first-principles transport theory, we predict the unprecedentedly high p-type ZT = 2.2 at 300 K and 5.3 at 800 K in full Heusler CsK 2 Bi and CsK 2 Sb, respectively. By incorporating the higher-order phonon scattering, we find that the high ZT value primarily stems from the ultralow lattice thermal conductivity ( κ L ) of less than 0.2 W mK −1 at room temperature, decreased by 40% compared to the calculation only considering three-phonon scattering. Such ultralow κ L is rooted in the enhanced phonon anharmonicity and scattering channels stemming from the coexistence of antibonding-induced anharmonic rattling of Cs atoms and low-lying optical branches. Moreover, the flat and heavy nature of valence band edges leads to a high Seebeck coefficient and moderate power factor at optimal hole concentration, while the dispersive and light conduction band edges yield much larger electrical conductivity and electronic thermal conductivity ( κ e ), and the predominant role of κ e suppresses the n-type ZT . This study offers a deeper insight into the thermal and electronic transport properties in full Heusler compounds with strong phonon anharmonicity and excellent thermoelectric performance.
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Theoretical upper limits of the thermal conductivity of Si3N4
Silicon nitride (Si3N4) is a promising substrate for high-power electronics due to its superior mechanical properties and potential outstanding thermal conductivity (κ). As experiments keep pushing the upper limit of κ of Si3N4, it is believed that it can reach 450 W/mK, similar to SiC, based on classical models and molecular dynamics simulations. In this work, we reveal from first principles that the theoretical κ upper limits of β-Si3N4 are only 169 and 57 W/mK along the c and a axes at room temperature, respectively. Those of α-Si3N4 are about 116 and 87 W/mK, respectively. The predicted temperature-dependent κ matches well with the highest available experimental data, which supports the accuracy of our calculations, and suggests that the κ upper limit of Si3N4 has already been reached in the experiment. Compared to other promising semiconductors (e.g., SiC, AlN, and GaN), Si3N4 has a much lower κ than expected even though the chemical bonding and mechanical strengths are close or even stronger. We find the underlying reason is that Si3N4 has much lower phonon lifetimes and mean free paths (<0.5 μm) due to the larger three-phonon scattering phase space and stronger anharmonicity. Interestingly, we find that the larger unit cell (with more basis atoms) that leads to a smaller fraction of acoustic phonons is not the reason for lower κ. Grain size-dependent κ indicates that the grain boundary scattering plays a negligible role in most experimental samples. This work clarifies the theoretical κ upper limits of Si3N4 and can guide experimental research.
more » « less- Award ID(s):
- 2212830
- NSF-PAR ID:
- 10505856
- Publisher / Repository:
- AIP Publishing LLC
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 122
- Issue:
- 18
- ISSN:
- 0003-6951
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract The lattice thermal conductivity (κph) of metals and semimetals is limited by phonon‐phonon scattering at high temperatures and by electron‐phonon scattering at low temperatures or in some systems with weak phonon‐phonon scattering. Following the demonstration of a phonon band engineering approach to achieve an unusually high κphin semiconducting cubic‐boron arsenide (c‐BAs), recent theories have predicted ultrahigh κphof the semimetal tantalum nitride in the θ‐phase (θ‐TaN) with hexagonal tungsten carbide (WC) structure due to the combination of a small electron density of states near the Fermi level and a large phonon band gap, which suppress electron‐phonon and three‐phonon scattering, respectively. Here, measurements on the thermal and electrical transport properties of polycrystalline θ‐TaN converted from the ε phase via high‐pressure synthesis are reported. The measured thermal conductivity of the θ‐TaN samples shows weak temperature dependence above 200 K and reaches up to 90 Wm−1K−1, one order of magnitude higher than values reported for polycrystalline ε‐TaN and δ‐TaN thin films. These results agree with theoretical calculations that account for phonon scattering by 100 nm‐level grains and suggest κphincrease above the 249 Wm−1K−1value predicted for single‐crystal WC when the grain size of θ‐TaN is increased above 400 nm.
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Zintl phase Mg 3 Sb 2 , which has ultra-low thermal conductivity, is a promising anisotropic thermoelectric material. It is worth noting that the prediction and experiment value of lattice thermal conductivity ( κ ) maintain a remarkable difference, troubling the development and application. Thus, we firstly included the four-phonon scattering processes effect and performed the Peierls–Boltzmann transport equation (PBTE) combined with the first-principles lattice dynamics to study the lattice thermal transport in Mg 3 Sb 2 . The results showed that our theoretically predicted κ is consistent with the experimentally measured, breaking through the limitations of the traditional calculation methods. The prominent four-phonon scatterings decreased phonon lifetime, leading to the κ of Mg 3 Sb 2 at 300 K from 2.45 (2.58) W m −1 K −1 to 1.94 (2.19) W m −1 K −1 along the in (cross)-plane directions, respectively, and calculation accuracy increased by 20%. This study successfully explains the lattice thermal transport behind mechanism in Mg 3 Sb 2 and implies guidance to advance the prediction accuracy of thermoelectric materials.more » « less
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This article shows experimentally that an external electric field affects the velocity of the longitudinal acoustic phonons (
v LA), thermal conductivity (κ), and diffusivity (D ) in a bulk lead zirconium titanate–based ferroelectric. Phonon conduction dominates κ, and the observations are due to changes in the phonon dispersion, not in the phonon scattering. This gives insight into the nature of the thermal fluctuations in ferroelectrics, namely, phonons labeled ferrons that carry heat and polarization. It also opens the way for phonon-based electrically driven all-solid-state heat switches, an enabling technology for solid-state heat engines. A quantitative theoretical model combining piezoelectric strain and phonon anharmonicity explains the field dependence ofv LA, κ, andD without any adjustable parameters, thus connecting thermodynamic equilibrium properties with transport properties. The effect is four times larger than previously reported effects, which were ascribed to field-dependent scattering of phonons. -
Utilizing first-principles calculations combined with phonon Boltzmann transport theory up to fourth-order anharmonicity, we systematically investigate the thermal transport properties of the biphenylene network [BPN, recently synthesized experimentally by Fan et al. , Science , 2021, 372 , 852–856] and hydrogenated BPN (HBPN). The calculations show that four-phonon scattering significantly affects the lattice thermal conductivity ( κ ) of BPN. At room temperature, the κ of BPN is reduced from 582.32 (1257.07) W m −1 K −1 to 309.56 (539.88) W m −1 K −1 along the x ( y ) direction after considering the four-phonon scattering. Moreover, our results demonstrate that the thermal transport in BPN could also be greatly suppressed by hydrogenation, where the κ of HBPN along the x ( y ) direction is merely 16.62% (10.14%) of that of pristine BPN at 300 K. The mechanism causing such an obvious decrease of κ of HBPN is identified to be due to the enhanced phonon scattering rate and reduced group velocity, which is further revealed by the increased scattering phase space and weakened C–C bond. The results presented in this work shed light on the intrinsic thermal transport features of BPN and HBPN, which will help us to understand the phonon transport processes and pave the way for their future developments in the thermal field.more » « less
- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1063/5.0149298
