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In this work, we report high performance GaN-on-Si Metal Insulator Semiconductor High Electron Mobility Transistors using TiAlOand HfZrO as the gate dielectric. We take the advantages of the high dielectric constant TiO2 and high bandgap Al2O3, achieving a low gate leakage current and simultaneously an excellent gate control capability. Ti and Al composition effect on the DC performance is investigated. A HfZrO gate dielectric is also utilized as a reference. fT/fmax of 150/206GHz and 150/250GHz were respectively achieved on TiAlO and HfZrO GaN-on-Si MISHEMTs. Device power performance is also evaluated.
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GaN-on-Si Metal Insulator Semiconductor High Electron Mobility Transistors using TiAlOand HfZrO as the gate dielectric
In this work, we report high performance GaN-on-Si Metal Insulator Semiconductor High Electron Mobility Transistors using TiAlOand HfZrO as the gate dielectric. We took the advantages of the high dielectric constant TiO2 and high bandgap Al2O3, achieving a low gate leakage current and simultaneously an excellent gate control capability. Ti and Al composition effect on the DC performance is investigated. A HfZrO gate dielectric is also utilized as a reference. fT/fmax of 150/206GHz and 150/250GHz were respectively achieved on TiAlO and HfZrO GaN-on-Si MISHEMTs. Device power performance is also evaluated.
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- Award ID(s):
- 2239302
- PAR ID:
- 10507688
- Publisher / Repository:
- Workshop of Compound Semiconductor Materials and Devices, 2024
- Date Published:
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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