Abstract High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as both active functional materials and thermal management materials. We report an isotropic high thermal conductivity exceeding 500 W m −1 K −1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals (only surpassed by diamond). Furthermore, the corresponding 3C-SiC thin films are found to have record-high in-plane and cross-plane thermal conductivity, even higher than diamond thin films with equivalent thicknesses. Our results resolve a long-standing puzzle that the literature values of thermal conductivity for 3C-SiC are lower than the structurally more complex 6H-SiC. We show that the observed high thermal conductivity in this work arises from the high purity and high crystal quality of 3C-SiC crystals which avoids the exceptionally strong defect-phonon scatterings. Moreover, 3C-SiC is a SiC polytype which can be epitaxially grown on Si. We show that the measured 3C-SiC-Si thermal boundary conductance is among the highest for semiconductor interfaces. These findings provide insights for fundamental phonon transport mechanisms, and suggest that 3C-SiC is an excellent wide-bandgap semiconductor for applications of next-generation power electronics as both active components and substrates. 
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                            Remarkable heat conduction mediated by non-equilibrium phonon polaritons
                        
                    
    
            Surface waves can lead to intriguing transport phenomena. In particular, surface phonon polaritons (SPhPs), which result from coupling between infrared light and optical phonons, have been predicted to contribute to heat conduction along polar thin films and nanowires [1]. However, experimental efforts thus far suggest only very limited SPhP contributions [2-5]. Through systematic measurements of thermal transport along the same 3C-SiC nanowires with and without a gold coating on the end(s) that serves to launch SPhPs, here we show that thermally excited SPhPs can significantly enhance the thermal conductivity of the uncoated portion of these wires. The extracted pre-decay SPhP thermal conductance is over two orders of magnitude higher than the Landauer limit predicted based on equilibrium Bose-Einstein distributions. We attribute the remarkable SPhP conductance to the efficient launching of non-equilibrium SPhPs from the gold-coated portion into the uncoated SiC nanowires, which is strongly supported by the observation that the SPhP-mediated thermal conductivity is proportional to the length of the gold coating(s). The reported discoveries open the door for modulating energy transport in solids via introducing SPhPs, which can effectively counteract the classical size effect in many technologically important films and improve the design of solid-state devices. 
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                            - PAR ID:
- 10509008
- Editor(s):
- Ziemelis, Karl
- Publisher / Repository:
- Springer Nature
- Date Published:
- Journal Name:
- Nature
- Volume:
- 623
- Issue:
- 7986
- ISSN:
- 0028-0836
- Page Range / eLocation ID:
- 307 to 312
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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