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Title: Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1 − x − yNxBiy alloys
We have investigated the influence of non-stoichiometry and local atomic environments on carrier transport in GaAs(N)Bi alloy films using local-electrode atom probe tomography (LEAP) in conjunction with time-resolved terahertz photoconductivity measurements. The local concentrations of N, Bi, and excess As, as well as Bi pair correlations, are quantified using LEAP. Using time-resolved THz photoconductivity measurements, we show that carrier transport is primarily limited by excess As, with the highest carrier mobilities for layers with yBi > 0.035.  more » « less
Award ID(s):
1810280 2240388
PAR ID:
10511981
Author(s) / Creator(s):
; ; ; ; ; ; ;
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Applied Physics Letters
Volume:
124
Issue:
15
ISSN:
0003-6951
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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