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Title: Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi
Time-resolved photoluminescence measurements are reported for InAsSbBi alloys grown by molecular beam epitaxy with Bi mole fractions ranging from 0 to 0.8%, yielding minority carrier lifetimes on the order of hundreds of nanoseconds. The minority carrier lifetimes extracted from the time-resolved photoluminescence measurements are comparable to those of lattice-matched InAsSb grown at the same respective temperatures. Nomarski imaging shows that smooth, droplet-free surface morphologies are obtained in 1 μm thick InAsSbBi epilayers grown at temperatures between 360 and 380 °C. The alloy composition-dependent bandgap energies for the InAsSbBi samples are determined from temperature-dependent steady-state photoluminescence measurements and compared with the tetragonal distortion measured by x-ray diffraction to determine the Sb and Bi mole fractions of each sample. The minority carrier lifetime and the achievable extension of the InAsSb(Bi) cut-off wavelength are analyzed as functions of alloy composition and compared with the performance of InAsSb layers with similar growth parameters.  more » « less
Award ID(s):
1720595
PAR ID:
10474920
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Publisher / Repository:
AIP Publishing
Date Published:
Journal Name:
Applied Physics Letters
Volume:
117
Issue:
6
ISSN:
0003-6951
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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