More Like this

1. Colossal anomalous Nernst effect in a correlated noncentrosymmetric kagome ferromagnet

   https://doi.org/10.1126/sciadv.abf1467  

   Asaba, T.; Ivanov, V.; Thomas, S. M.; Savrasov, S. Y.; Thompson, J. D.; Bauer, E. D.; Ronning, F. (March 2021, Science Advances)

   null (Ed.)

   The transverse voltage generated by a temperature gradient in a perpendicularly applied magnetic field, termed the Nernst effect, has promise for thermoelectric applications and for probing electronic structure. In magnetic materials, an anomalous Nernst effect (ANE) is possible in a zero magnetic field. We report a colossal ANE in the ferromagnetic metal UCo 0.8 Ru 0.2 Al, reaching 23 microvolts per kelvin. Uranium’s 5 f electrons provide strong electronic correlations that lead to narrow bands, a known route to producing a large thermoelectric response. In addition, uranium’s strong spin-orbit coupling produces an intrinsic transverse response in this material due to the Berry curvature associated with the relativistic electronic structure. Theoretical calculations show that in UCo 0.8 Ru 0.2 Al at least 148 Weyl nodes, and two nodal lines, exist within 60 millielectron volt of the Fermi level. This work demonstrates that magnetic actinide materials can host strong Nernst and Hall responses due to their combined correlated and topological nature. 

   more » « less
2. Origin of the anisotropic Beer–Lambert law from dichroism and birefringence in β -Ga2O3

   https://doi.org/10.1063/5.0226902  

   Adnan, Md_Mohsinur Rahman; Schubert, Mathias; Myers, Roberto C (August 2024, Applied Physics Letters)

   The anisotropic optical absorption edge of β-Ga2O3 follows a modified Beer–Lambert law having two effective absorption coefficients. The absorption coefficient of linearly polarized light reduces to the least absorbing direction beyond a critical penetration depth, which itself depends on polarization and wavelength. To understand this behavior, a Stokes vector analysis is performed to track the polarization state as a function of depth. The weakening of the absorption coefficient is associated with a gradual shift of linear polarization to the least absorbing crystallographic direction in the plane, which is along the a-exciton within the (010) plane or along the b-exciton in the (001) plane. We show that strong linear dichroism near the optical absorption edge causes this shift in β-Ga2O3, which arises from the anisotropy and spectral splitting of the physical absorbers, i.e., excitons. The linear polarization shift is accompanied by a variation in the ellipticity due to the birefringence of β-Ga2O3. Analysis of the phase relationship between the incoming electric field to that at a certain depth reveals the phase speed as an effective refractive index, which varies along different crystallographic directions. The critical penetration depth is shown to be correlated with the depth at which the ellipticity is maximal. Thus, the anisotropic Beer–Lambert law arises from the interplay of both the dichroic and birefringent properties of β-Ga2O3. 

   more » « less
3. Structural anisotropy in Sb thin films

   https://doi.org/10.1063/5.0159670  

   Adhikari, Pradip; Wijesinghe, Anuradha; Rathore, Anjali; Yoo, Timothy Jinsoo; Kim, Gyehyeon; Yeom, Sinchul; Lee, Hyoung-Taek; Mazza, Alessandro R; Sohn, Changhee; Park, Hyeong-Ryeol; et al (January 2024, APL Materials)

   Sb thin films have attracted wide interest due to their tunable band structure, topological phases, high electron mobility, and thermoelectric properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by molecular beam epitaxy. We find a novel anisotropic directional dependence on their structural, morphological, and electronic properties. The origin of the anisotropic features is elucidated using first-principles density functional theory (DFT) calculations. The growth regime of crystalline and amorphous Sb thin films was determined by mapping the surface reconstruction phase diagram of the GaSb(001) surface under Sb2 flux, with confirmation of structural characterizations. Crystalline Sb thin films show a rhombohedral crystal structure along the rhombohedral (211) surface orientation parallel to the cubic (001) surface orientation of the GaSb substrate. At this coherent interface, Sb atoms are aligned with the GaSb lattice along the [1̄10] crystallographic direction but are not aligned well along the [110] crystallographic direction, which results in anisotropic features in reflection of high-energy electron diffraction patterns, misfit dislocation formation, surface morphology, and transport properties. Our DFT calculations show that the preferential orientation of the rhombohedral Sb (211) plane may originate from the GaSb surface, where Sb atoms align with the Ga and Sb atoms on the reconstructed surface. The formation energy calculations confirm the stability of the experimentally observed structures. Our results provide optimal film growth conditions for further studies of novel properties of Bi1−xSbx thin films with similar lattice parameters and an identical crystal structure, as well as functional heterostructures of them with III–V semiconductor layers along the (001) surface orientation, supported by a theoretical understanding of the anisotropic film orientation. 

   more » « less
4. Orienting and shaping organic semiconductor single crystals through selective nanoconfinement

   https://doi.org/10.1039/D0SM01928C  

   Alaei, Aida; Zong, Kai; Asawa, Kaustubh; Chou, Tseng-Ming; Briseño, Alejandro L.; Choi, Chang-Hwan; Lee, Stephanie S. (January 2021, Soft Matter)

   null (Ed.)

   For organic semiconductor crystals exhibiting anisotropic charge transport along different crystallographic directions, nanoconfinement is a powerful strategy to control crystal orientation by aligning the fast crystallographic growth direction(s) with the unconfined axis(es) of nanoconfining scaffolds. Here, design rules are presented to relate crystal morphology, scaffold geometry, and orientation control in solution-processed small-molecule crystals. Specifically, organic semiconductor triisopropylsilylethynyl pyranthrene needle-like crystals with a dimensionality of n = 1 and perylene platelike crystals with n = 2 were grown from solution within nanoconfining scaffolds comprising cylindrical nanopores with a dimensionality of m = 1, representing one unconfined dimension along the cylinder axis, and those comprising nanopillar arrays with a dimensionality of m = 2. For m = n systems, native crystal growth habits were preserved while the crystal orientation in n = m direction(s) was dictated by the geometry of the scaffold. For n ≠ m systems, on the other hand, orientation control was restricted within a single plane, either parallel or perpendicular to the substrate surface. Intriguingly, control over crystal shape was also observed for perylene crystals grown in cylindrical nanopores ( n > m ). Within the nanopores, crystal growth was restricted along a single direction to form a needle-like morphology. Once growth proceeded above the scaffold surface, the crystals adopted their native growth habit to form asymmetric T-shaped single crystals with concave corners. These findings suggest that nanoporous scaffolds with spatially-varying dimensionalities can be used to grow single crystals of complex shapes. 

   more » « less
5. Extremely anisotropic van der Waals thermal conductors

   https://doi.org/10.1038/s41586-021-03867-8  

   Kim, Shi En; Mujid, Fauzia; Rai, Akash; Eriksson, Fredrik; Suh, Joonki; Poddar, Preeti; Ray, Ariana; Park, Chibeom; Fransson, Erik; Zhong, Yu; et al (September 2021, Nature)

   Abstract The densification of integrated circuits requires thermal management strategies and high thermal conductivity materials 1–3 . Recent innovations include the development of materials with thermal conduction anisotropy, which can remove hotspots along the fast-axis direction and provide thermal insulation along the slow axis 4,5 . However, most artificially engineered thermal conductors have anisotropy ratios much smaller than those seen in naturally anisotropic materials. Here we report extremely anisotropic thermal conductors based on large-area van der Waals thin films with random interlayer rotations, which produce a room-temperature thermal anisotropy ratio close to 900 in MoS 2 , one of the highest ever reported. This is enabled by the interlayer rotations that impede the through-plane thermal transport, while the long-range intralayer crystallinity maintains high in-plane thermal conductivity. We measure ultralow thermal conductivities in the through-plane direction for MoS 2 (57 ± 3 mW m −1  K −1 ) and WS 2 (41 ± 3 mW m −1  K −1 ) films, and we quantitatively explain these values using molecular dynamics simulations that reveal one-dimensional glass-like thermal transport. Conversely, the in-plane thermal conductivity in these MoS 2 films is close to the single-crystal value. Covering nanofabricated gold electrodes with our anisotropic films prevents overheating of the electrodes and blocks heat from reaching the device surface. Our work establishes interlayer rotation in crystalline layered materials as a new degree of freedom for engineering-directed heat transport in solid-state systems. 

   more » « less