Magnetic skyrmions are topologically nontrivial spin textures with envisioned applications in energy-efficient magnetic information storage. Toggling the presence of magnetic skyrmions via writing/deleting processes is essential for spintronics applications, which usually require the application of a magnetic field, a gate voltage or an electric current. Here we demonstrate the reversible field-free writing/deleting of skyrmions at room temperature, via hydrogen chemisorption/desorption on the surface of Ni and Co films. Supported by Monte-Carlo simulations, the skyrmion creation/annihilation is attributed to the hydrogen-induced magnetic anisotropy change on ferromagnetic surfaces. We also demonstrate the role of hydrogen and oxygen on magnetic anisotropy and skyrmion deletion on other magnetic surfaces. Our results open up new possibilities for designing skyrmionic and magneto-ionic devices.
This content will become publicly available on June 3, 2025
Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic noncentrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we must understand skyrmion-defect interactions with two main goals—determining how skyrmions navigate intrinsic material defects and determining how to engineer disorder for optimal device operation. Here, we introduce a tunable means of creating a skyrmion-antiskyrmion system by engineering the disorder landscape in FeGe using ion irradiation. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au4+ions at varying fluences, inducing amorphous regions within the crystalline matrix. Using low-temperature electrical transport and magnetization measurements, we observe a strong topological Hall effect with a double-peak feature that serves as a signature of skyrmions and antiskyrmions. These results are a step towards the development of information storage devices that use skyrmions and antiskyrmions as storage bits, and our system may serve as a testbed for theoretically predicted phenomena in skyrmion-antiskyrmion crystals.
more » « less- Award ID(s):
- 2330562
- PAR ID:
- 10517478
- Publisher / Repository:
- npJ Spintronics
- Date Published:
- Journal Name:
- npj Spintronics
- Volume:
- 2
- Issue:
- 1
- ISSN:
- 2948-2119
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Magnetic skyrmions are topologically protected spin textures that are being investigated for their potential use in next generation magnetic storage devices. Here, magnetic skyrmions and other magnetic phases in Fe1−
x Cox Ge (x < 0.1) microplates (MPLs) newly synthesized via chemical vapor deposition are studied using both magnetic imaging and transport measurements. Lorentz transmission electron microscopy reveals a stabilized magnetic skyrmion phase near room temperature (≈280 K) and a quenched metastable skyrmion lattice via field cooling. Magnetoresistance (MR) measurements in three different configurations reveal a unique anomalous MR signal at temperatures below 200 K and two distinct field dependent magnetic transitions. The topological Hall effect (THE), known as the electronic signature of magnetic skyrmion phase, is detected for the first time in a Fe1−x Cox Ge nanostructure, with a large and positive peak THE resistivity of ≈32 nΩ cm at 260 K. This large magnitude is attributed to both nanostructuring and decreased carrier concentrations due to Co alloying of the Fe1−x Cox Ge MPL. A consistent magnetic phase diagram summarized from both the magnetic imaging and transport measurements shows that the magnetic skyrmions are stabilized in Fe1−x Cox Ge MPLs compared to bulk materials. This study lays the foundation for future skyrmion‐based nanodevices in information storage technologies. -
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Abstract Control and understanding of ensembles of skyrmions is important for realization of future technologies. In particular, the order-disorder transition associated with the 2D lattice of magnetic skyrmions can have significant implications for transport and other dynamic functionalities. To date, skyrmion ensembles have been primarily studied in bulk crystals, or as isolated skyrmions in thin film devices. Here, we investigate the condensation of the skyrmion phase at room temperature and zero field in a polar, van der Waals magnet. We demonstrate that we can engineer an ordered skyrmion crystal through structural confinement on the
μ m scale, showing control over this order-disorder transition on scales relevant for device applications. -
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Abstract Magnetic skyrmions are swirling spin structures stabilized typically by the Dyzaloshinskii-Moriya interaction. The existing control of magnetic skyrmions has often relied on the use of an electric current, which may cause overheating in densely packed devices. Here we demonstrate, using phase-field simulations, that an isolated Néel skyrmion in a magnetic nanodisk can be repeatedly created and deleted by voltage-induced strains from a juxtaposed piezoelectric. Such a skyrmion switching is non-volatile, and consumes only ~0.5 fJ per switching which is about five orders of magnitude smaller than that by current-induced spin-transfer-torques. It is found that the strain-mediated skyrmion creation occurs through an intermediate vortex-like spin structure, and that the skyrmion deletion occurs though a homogenous shrinkage during which the Néel wall is temporarily transformed to a vortex-wall. These findings are expected to stimulate experimental research into strain-mediated voltage control of skyrmions, as well as other chiral spin structures for low-power spintronics.
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Abstract Creating materials that do not exist in nature can lead to breakthroughs in science and technology. Magnetic skyrmions are topological excitations that have attracted great attention recently for their potential applications in low power, ultrahigh density memory. A major challenge has been to find materials that meet the dual requirement of small skyrmions stable at room temperature. Here we meet both these goals by developing epitaxial FeGe films with excess Fe using atomic layer molecular beam epitaxy (MBE) far from thermal equilibrium. Our atomic layer design permits the incorporation of 20% excess Fe while maintaining a non-centrosymmetric crystal structure supported by theoretical calculations and necessary for stabilizing skyrmions. We show that the Curie temperature is well above room temperature, and that the skyrmions have sizes down to 15 nm as imaged by Lorentz transmission electron microscopy (LTEM) and magnetic force microscopy (MFM). The presence of skyrmions coincides with a topological Hall effect-like resistivity. These atomically tailored materials hold promise for future ultrahigh density magnetic memory applications.
