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Abstract As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA),L10‐FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub‐5 nm sizes. However, the compatibility requirement of preparingL10‐FePd thin films on Si/SiO2wafers is still unmet. In this paper, high‐qualityL10‐FePd and its SAF on Si/SiO2wafers are prepared by coating the amorphous SiO2surface with an MgO(001) seed layer. The preparedL10‐FePd single layer and SAF stack are highly (001)‐textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X‐ray diffraction measurement and atomic resolution‐scanning transmission electron microscopy, are conducted to explain the outstanding performance ofL10‐FePd layers. A fully‐epitaxial growth that starts from MgO seed layer, induces the (001) texture ofL10‐FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.
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Conjugation through Si–O–Si bonds, silsesquioxane (SQ) half cage copolymers, extended examples via SiO 0.5 /SiO 1.5 units: multiple emissive states in violation of Kasha's rule
Fluorescence emissionλmaxred-shifts with increasing DP in Vy4HC co-oligomers.
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- Award ID(s):
- 2103628
- PAR ID:
- 10523857
- Publisher / Repository:
- Royal Society of Chemistry
- Date Published:
- Journal Name:
- Dalton Transactions
- Volume:
- 53
- Issue:
- 24
- ISSN:
- 1477-9226
- Page Range / eLocation ID:
- 10328 to 10337
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/d4dt00567h
