More Like this

1. Nano-scale ferroelectric domain differentiation in periodically poled lithium niobate with auger electron spectroscopy

   https://doi.org/10.1364/OPTCON.452657  

   McLoughlin, Torrey; Randall_Babbitt, Wm; Nakagawa, Wataru (March 2022, Optics Continuum)

   A new method for characterizing lithium niobate +/-Z ferroelectric polarization domains using Auger electron spectroscopy (AES) is presented. The domains of periodically poled samples are found to be differentiable using the peak amplitude of the Auger oxygen KLL transition, with -Z domains having a larger peak-amplitude as compared to +Z domains. The peak amplitude separation between domains is found to be dependent on the primary beam current, necessitating a balance between the insulating samples charging under the primary beam and achieving sufficient signal to noise in amplitude separation. AES amplitude-based domain characterization is demonstrated for fields of view (FOV) ranging from 1 $\mathrm{\mu <\#comment/>}$m to 78 $\mathrm{\mu <\#comment/>}$m. Domain spatial resolution of 91 nm is demonstrated at 1 $\mathrm{\mu <\#comment/>}$m FOV. 

   more » « less
2. Mid-IR spectroscopy of Er ³⁺ doped low-phonon CsCdCl ₃ and CsPbCl ₃ crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei_Ei; Fleischman, Zackery_D; McKay, Jason; Hommerich, Uwe; Kabir, Al_Amin; Riggins, Jazmine; Trivedi, Sudhir; Dubinskii, Mark (September 2022, Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of ${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at $\sim <\#comment/>800\mathrm{n}\mathrm{m}$and $\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at $\sim <\#comment/>1.55$, $\sim <\#comment/>2.75$, $\sim <\#comment/>3.5$, and $\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of $\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of $\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the ${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be $\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and $\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed. 

   more » « less
3. Efficient and compact thermo-optic phase shifter in silicon-rich silicon nitride

   https://doi.org/10.1364/OL.431757  

   Nejadriahi, Hani; Pappert, Steve; Fainman, Yeshaiahu; Yu, Paul (September 2021, Optics Letters)

   The design, fabrication, and characterization of low-loss ultra-compact bends in high-index ( $n=3.1$at $\mathrm{\lambda <\#comment/>}=1550\mathrm{n}\mathrm{m}$) plasma-enhanced chemical vapor deposition silicon-rich silicon nitride (SRN) were demonstrated and utilized to realize efficient, small footprint thermo-optic phase shifter. Compact bends were structured into a folded waveguide geometry to form a rectangular spiral within an area of $65\times <\#comment/>65\text{µ<\#comment/>}{\mathrm{m}}^2$, having a total active waveguide length of 1.2 mm. The device featured a phase-shifting efficiency of $8\mathrm{m}\mathrm{W}/\mathrm{\pi <\#comment/>}$and a 3 dB switching bandwidth of 15 KHz. We propose SRN as a promising thermo-optic platform that combines the properties of silicon and stoichiometric silicon nitride. 

   more » « less
4. Quasi-monolithic heterodyne laser interferometer for inertial sensing

   https://doi.org/10.1364/OL.473476  

   Zhang, Yanqi; Guzman, Felipe (September 2022, Optics Letters)

   We present a compact heterodyne laser interferometer developed for high-sensitivity displacement sensing applications. This interferometer consists of customized prisms and wave plates assembled as a quasi-monolithic unit to realize a miniaturized system. The interferometer design adopts a common-mode rejection scheme to provide a high rejection ratio to common environmental noise. Experimental tests in vacuum show a displacement sensitivity level of $11\mathrm{p}\mathrm{m}/\sqrt{\mathrm{H}\mathrm{z}}$at $100\mathrm{m}\mathrm{H}\mathrm{z}$and as low as $0.6\mathrm{p}\mathrm{m}/\sqrt{\mathrm{H}\mathrm{z}}$above $1\mathrm{p}\mathrm{m}$. The prototype unit is $20\mathrm{m}\mathrm{m}\times <\#comment/>20\mathrm{m}\mathrm{m}\times <\#comment/>10\mathrm{m}\mathrm{m}$in size and weighs $4.5\mathrm{g}$, allowing subsequent integration in compact systems. 

   more » « less
5. High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure

   https://doi.org/10.1364/OL.400917  

   Velpula, Ravi_Teja; Jain, Barsha; Velpula, Swetha; Nguyen, Hoang-Duy; Nguyen, Hieu_Pham_Trung (September 2020, Optics Letters)

   In this Letter, the electron-blocking-layer (EBL)-free AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using a strip-in-a-barrier structure have been proposed. The quantum barrier (QB) structures are systematically engineered by integrating a 1 nm intrinsic ${\mathrm{A}\mathrm{l}}_x{\mathrm{G}\mathrm{a}}_{(1-<\#comment/>x)}\mathrm{N}$strip into the middle of QBs. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher carrier radiative recombination. Our study shows that the proposed structure improves radiative recombination by $\sim <\#comment/>220\mathrm{\%<\#comment/>}$, reduces electron leakage by $\sim <\#comment/>11$times, and enhances optical power by $\sim <\#comment/>225\mathrm{\%<\#comment/>}$at 60 mA current injection compared to a conventional AlGaN EBL LED structure. Moreover, the EBL-free strip-in-a-barrier UV LED records the maximum internal quantum efficiency (IQE) of $\sim <\#comment/>61.5\mathrm{\%<\#comment/>}$which is $\sim <\#comment/>72\mathrm{\%<\#comment/>}$higher, and IQE droop is $\sim <\#comment/>12.4\mathrm{\%<\#comment/>}$, which is $\sim <\#comment/>333\mathrm{\%<\#comment/>}$less compared to the conventional AlGaN EBL LED structure at $\sim <\#comment/>284.5\mathrm{n}\mathrm{m}$wavelength. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance the optical power and produce highly efficient UV emitters. 

   more » « less