This letter presents a 27.5–46.2-GHz broadband low-noise amplifier (LNA) featuring IP3 enhancement. The LNA bandwidth (BW) is extended by implementing dual-resonant input matching and a broadband output network. The LNA IP3 is enhanced by incorporating parallel PMOS and NMOS paths in the second stage, with their output currents combined through a three-winding transformer. Implemented using the GlobalFoundries 45-nm CMOS silicon-on insulator (SOI) process, the LNA demonstrates 27.5–46.2 GHz effective BW, 2.1 dB minimum noise figure (NF), and 19.8 dB peak gain. The measured IIP3 is − 3.6 dBm at 34 GHz under 25.5 mW DC power consumption. Compared to recently reported broadband LNAs with a similar frequency range, this design achieves the state-of-the-art NF, IIP3, and figure-of-merit (FoM).
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This content will become publicly available on June 16, 2025
A 17 dBm OP 1 dB F-Band GaN-on-SiC HEMT LNA with a Monolithic Substrate-Integrated Waveguide Filter
This paper demonstrates the monolithic
integration of a substrate-integrated waveguide bandpass
filter (BPF) and a low-noise amplifier (LNA) at F-band,
fabricated in a 70-nm GaN-on-SiC technology. The three-stage
LNA alone achieves a state-of-the-art average noise figure of
3.6 dB over 87–115 GHz. The LNA + BPF exhibits a peak
gain of 13.6 dB over a 3 dB bandwidth of 17 GHz from 104 to
121 GHz. The average noise figure is 4.9 dB over 87–115 GHz.
The OP1 dB and saturated output power are 17.6dBm and
>20 dBm, respectively.
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- PAR ID:
- 10542541
- Publisher / Repository:
- IEEE
- Date Published:
- ISBN:
- 979-8-3503-7504-6
- Page Range / eLocation ID:
- 314 to 317
- Subject(s) / Keyword(s):
- Bandpass filter gallium nitride high-electron-mobility transistors low-noise amplifiers millimeter wave monolithic microwave integrated circuits substrate-integrated waveguide
- Format(s):
- Medium: X
- Location:
- Washington, DC, USA
- Sponsoring Org:
- National Science Foundation
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