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Title: Determining the oxidation stability of SnSe under atmospheric exposure
Abstract Understanding surface stability becomes critical as 2D materials like SnSe are developed for piezoelectric and optical applications. SnSe thin films deposited by molecular beam epitaxy showed no structural changes after a two-year exposure to atmosphere, as confirmed by X-ray diffraction and Raman spectroscopy. X-ray photoelectron spectroscopy and reflectivity show a stable 3.5 nm surface oxide layer, indicating a self-arresting oxidative process. Resistivity measurements show an electrical response dominated by SnSe post-exposure. This work shows that SnSe films can be used in ambient conditions with minimal risk of long-term degradation, which is critical for the development of piezoelectric or photovoltaic devices. Graphical Abstract  more » « less
Award ID(s):
2039351 1539916
PAR ID:
10543900
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ;
Publisher / Repository:
Cambridge University Press (CUP)
Date Published:
Journal Name:
MRS Communications
Volume:
14
Issue:
5
ISSN:
2159-6867
Format(s):
Medium: X Size: p. 1000-1006
Size(s):
p. 1000-1006
Sponsoring Org:
National Science Foundation
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