Epitaxial growth of κ-phase Ga 2 O 3 thin films is investigated on c-plane sapphire, GaN- and AlN-on-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition. The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure κ-Ga 2 O 3 films are successfully grown on GaN-, AlN-on-sapphire, and YSZ substrates through a systematical tuning of growth parameters including the precursor molar flow rates, chamber pressure, and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of β- and κ-polymorphs of Ga 2 O 3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology, and roughness of κ-Ga 2 O 3 films grown on different substrates are investigated as a function of precursor flow rate. High-resolution scanning transmission electron microscopy imaging of κ-Ga 2 O 3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN, and YSZ substrates. The growth of single crystal orthorhombic κ-Ga 2 O 3 films is confirmed by analyzing the scanning transmission electron microscopy nanodiffraction pattern. The chemical composition, surface stoichiometry, and bandgap energies of κ-Ga 2 O 3 thin films grown on different substrates are studied by high-resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between κ-Ga 2 O 3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with an exception of κ-Ga 2 O 3 /GaN interface, which shows type-I (straddling) band alignment.
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This content will become publicly available on July 1, 2025
Atomic structure of a NbTiN/AlN/NbTiN Josephson junction grown by molecular-beam epitaxy
Nanometer-scale crystallographic structure and orientation of a NbTiN/AlN/NbTiN device stack grown via plasma-assisted molecular beam epitaxy on c-plane sapphire are reported. Structure, orientation, interface roughness, and thickness are investigated using correlative four-dimensional scanning transmission electron microscopy and atom probe tomography (APT). This work finds NbTiN that is rock salt structured and highly oriented toward ⟨111⟩ with rotations about that axis corresponding to step edges in the c-plane sapphire with a myriad of twin boundaries that exhibit nanoscale spacing. The wurtzite (0001) AlN film grown on (111) NbTiN exhibits nm-scale changes in the thickness resulting in pinhole shorts across the barrier junction. The NbTiN overlayer grown on AlN is polycrystalline, randomly oriented, and highly strained. APT was also used to determine local changes in chemistry within the superconductor and dielectric. Deviation from both intended cation:cation and cation:anion ratios are observed. The results from conventional and nanoscale metrology highlight the challenges of engineering nitride trilayer heterostructures in material systems with complicated and understudied phase space.
more » « less- Award ID(s):
- 2125899
- PAR ID:
- 10554163
- Publisher / Repository:
- AIP
- Date Published:
- Journal Name:
- Journal of Vacuum Science & Technology A
- Volume:
- 42
- Issue:
- 4
- ISSN:
- 0734-2101
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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