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1. Effect of microstructure on the optical properties of sputtered iridium thin films

   https://doi.org/10.1364/OME.390421  

   Pfiester, Nicole_A; Grossklaus, Kevin_A; Stevens, Margaret_A; Vandervelde, Thomas_E (April 2020, Optical Materials Express)

   The refractory metal iridium has many applications in high performance optical devices due to its high reflectivity into X-ray frequencies, low oxidation rate, and high melting point. Depositing Ir via magnetron sputtering produces high quality thin films, but the chamber pressure and sputter conditions can change Ir film microstructure on the nanoscale. Film microstructure is commonly examined through microscopy of film cross-sections, which is both a destructive characterization method and time consuming. In this work, we have utilized a non-destructive characterization technique, spectroscopic ellipsometry, to correlate the optical properties of the metal films with their structural morphologies, enabling large-scale inspection of optical components or the ability to customize the metal refractive index for the application at hand. The optical properties of Ir thin films deposited at chamber pressures from 10 mTorr to 25 mTorr are reported and compared to microscopy and resistivity results. The measurements were conducted with films deposited both on a bare wafer and on a titanium sublayer. 

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2. Adverse Effects of Trace Non-polar Binder on Ion Transport in Free-standing Sulfide Solid Electrolyte Separators

   https://doi.org/10.1149/1945-7111/aced24  

   Mills, Anna; Yang, Guang; Tsai, Wan-Yu; Chen, X. Chelsea; Sacci, Robert L.; Armstrong, Beth L.; Hallinan, Daniel T.; Nanda, Jagjit (August 2023, Journal of The Electrochemical Society)

   Sulfide solid-state electrolyte (SE) possesses high room-temperature ionic conductivity. However, fabrication of the free-standing, sheet-type thin sulfide SE film electrolyte to enable all-solid-state batteries to deliver high energy and power density remains challenging. Herein we show that argyrodite sulfide (Li₆PS₅Cl) SE can be slurry cast to form free-standing films with low (≤5 wt%) loadings of poly(isobutylene) (PIB) binder. Two factors contribute to a lower areal specific resistance (ASR) of the thin film SEs benchmarked to the pristine powder pellet SSE counterparts: i) 1–2 orders reduced thickness and ii) reasonably comparable ionic conductivity at room temperature after the isostatic pressing process. Nevertheless, an increasing polymer binder loading inevitably introduced voids in the thin film SEs, compromising anode/electrolyte interfacial ion transport. Our findings highlight that electrolyte/electrode interfacial stability, as well as the selection of slurry components, including sulfide SE, binder, and solvent, play essential roles in thin film sulfide electrolyte development. 

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3. Growth of nanostructured molybdenum disulfide (MoS2) thin films on a nanohole-patterned substrate using plasma-enhanced atomic layer deposition (ALD)

   https://doi.org/10.1063/5.0153256  

   Xiao, Zhigang; Doerk, Gregory; Kisslinger, Kim; Jones, Abram; Monikandan, Rebhadevi (May 2023, AIP Advances)

   Nanostructured molybdenum disulfide (MoS2) thin films were grown on a nanohole-patterned silicon substrate using plasma-enhanced atomic layer deposition. A nanoscale hole-patterned silicon substrate was fabricated for the growth of MoS2 film using the self-assembly-based nanofabrication method. The nanoscale holes can significantly increase the surface area of the substrate while the formation and growth of nanostructures normally start at the surface of the substrate. Hydrogen sulfide (H2S) gas was used as the S source in the growth of molybdenum disulfide (MoS2) while molybdenum (V) chloride (MoCl5) powder was used as the Mo source. The MoS2 film had a stoichiometric ratio of 1 (Mo) to 2 (S), and had peaks of E12g and A1g, which represent the in-plane and out-plane vibration modes of the Mo–S bond, respectively. It was found that the MoS2 film grown in the nanoscale hole, especially at the wall of the hole, has more hexagonal-like structures due to the effects of nanoscale space confinement and the nanoscale interface although the film shows an amorphous structure. Post-growth high-temperature annealing ranging from 800 to 900 °C produced local crystalline structures in the film, which are compatible with those reported by other researchers. 

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4. Surface dependence of electronic growth of Cu(111) on MoS2

   https://doi.org/10.1063/5.0215887  

   Harms, Haley A; Cunningham, Connor J; Kidd, Timothy E; Stollenwerk, Andrew J (August 2024, Applied Physics Letters)

   Scanning tunneling microscopy shows that copper deposited at room temperature onto a freshly exfoliated MoS2 surface forms Cu(111) clusters with periodic preferred heights of 5, 8, and 11 atomic layers. These height intervals correlate with Fermi nesting regions along the necks of the bulk Cu Fermi surface, indicating a connection between physical and electronic structures. Density functional theory calculations of freestanding Cu(111) films support this as well, predicting a lower density of states at the Fermi level for these preferred heights. This is consistent with other noble metals deposited on MoS2 that exhibit electronic growth, in which the metal films self-assemble as nanostructures minimizing quantum electronic energies. Here, we have discovered that it is critical for the metal deposition to begin on a clean MoS2 surface. If copper is deposited onto an already Cu coated surface, even if the original film displays electronic growth, the resulting Cu film lacks quantization. Instead, the preferred heights of the Cu clusters simply increase linearly with the amount of Cu deposited upon the surface. We believe this is due to different bonding conditions during the initial stages of growth. Newly deposited copper would bond strongly to the already present copper clusters, rather than the weak bonding, which exists to the van der Waals terminated surface of MoS2. The stronger bonding with previously deposited clusters hinders additional Cu atoms from reaching their lowest quantum energy state. The interface characteristics of the van der Waals surface enable surface engineering of self-assembled structures to achieve different applications. 

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5. Forming gas annealing-induced reversible 2D-to-3D bonding transition in 3R-MoS2

   https://doi.org/10.1063/5.0279605  

   Schreier, Caleb; Hasan, Nazmul; Shao, Chen; Wu, Stephen M (September 2025, Applied Physics Letters)

   We report a method of engineering a reversible change in interlayer bonding between layers of exfoliated thin films of MoS2 by means of hydrogen intercalation through forming gas annealing. Interlayer bonding strength is probed through the behavior of MoS2 under process-induced strain engineering, where two-dimensional (2D) flakes are encapsulated with a deposited stressed thin film layer to transfer strain into the underlying 2D materials. It is shown that after forming gas annealing, the depth of the strain transferred into multilayer MoS2 is enhanced as determined through layer-thickness-dependent Raman spectroscopic mapping. This change represents a transition from a 2D van der Waals-bonded material in the as-exfoliated samples to a more three-dimensional (3D)-bonded system in the annealed samples. We demonstrate the reversibility of this effect by means of vacuum annealing of previously forming gas annealed samples. The process of forming gas annealing itself also imparts strain into MoS2 due to a combination of 2D-to-3D bonding transition with differential thermal mismatch between the MoS2 and the substrate. These strains are shown to be retained after the vacuum annealing process, despite the transition back to 2D bonding. Since forming gas annealing is a common technical process in engineering 2D electronic devices, these results represent an important consideration in understanding non-intentionally applied strains due to changes in the mechanical properties of 2D materials. 

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