Advanced FinFET SRAMs undergo reliability degradation due to various front-end and back-end wearout mechanisms. The design of reliable SRAMs benefits from accurate wearout models that are calibrated by accelerated test. With respect to testing, the accelerated conditions which can help separate the dominant wearout mechanisms related to circuit failure is crucial for model calibration and reliability prediction. In this paper, the estimation of optimal accelerated test regions for a 14nm FinFET SRAM under various wearout mechanisms is presented. The dominant regions for specific mechanisms are compared and analyzed for effective testing. It is observed that for our SRAM example circuit only bias temperature instability (BTI) and middle-of-line time-dependent dielectric breakdown (MTDDB) have test regions where their failures can be isolated, while the other mechanisms can’t be extracted individually due to acceptable regions’ overlap. Meanwhile, the SRAM cell activity distribution has a small influence on test regions and selectivity.
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This content will become publicly available on January 21, 2026
Impact of thermal crosstalk on dependent failure rates of multilayer ceramic capacitors undergoing lifetime testing
Several research studies have investigated the degradation of BaTiO3-based dielectric capacitor materials, focusing on the impact of composition, defect chemistry, and microstructural design to limit the electromigration of oxygen vacancies under electric fields at finite temperatures. Electromigration can be a dominant mechanism that controls failure rates in the individual multilayer ceramic capacitor (MLCC) components in testing the reliability of failures with highly accelerated lifetime testing (HALT) to determine the mean time to failure of MLCCs surface mounted onto printed circuit boards (PCBs). Conventional assumptions often consider these failures as independent, with no interaction between components on the PCB. However, this study employs a Physics of Failure (PoF) approach to closely examine transient degradation and its impact on MLCC reliability, emphasizing thermal crosstalk and its influence on dependent and independent failure rates. Finite element analysis thermal modeling and infrared thermography were used to assess the impact of circuit layout and component spacing on heat dissipation and thermal crosstalk under various electrical stress conditions. The study distinguishes between dependent and independent failures under a HALT, quantified through a β′ factor reflecting common cause failures due to thermal crosstalk. Through a series of experimental and statistical analyses, the β′ factor is evaluated with respect to temperature, voltage, and component spacing. These insights highlight the importance of understanding the nature of the data in reliability testing of MLCCs and optimizing the layout design of high-density circuits to mitigate dependent failures, improving overall reliability and informing better design and packaging strategies.
more » « less- Award ID(s):
- 1841453
- PAR ID:
- 10567283
- Publisher / Repository:
- Journal of Applied Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 137
- Issue:
- 3
- ISSN:
- 0021-8979
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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