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Abstract Scalable substitutional doping of 2D transition metal dichalcogenides is a prerequisite to developing next‐generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, scalable growth and vanadium (V) doping of 2D WSe2at front‐end‐of‐line and back‐end‐of‐line compatible temperatures of 800 and 400 °C, respectively, is reported. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results inp‐type doping via the introduction of discrete defect levels that lie close to the valence band maxima. Thep‐type nature of the V dopants is further verified by constructed field‐effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, this study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic‐grade wafer‐scale extrinsic 2D semiconductors.
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This content will become publicly available on March 11, 2026
Evidence for Topological States and a Lifshitz Transition in Metastable 2 M ‐WSe 2
Abstract In recent years,Tdtransition metal dichalcogenides have been heavily explored for their type‐II Weyl topology, gate‐tunable superconductivity, and nontrivial edge states in the monolayer limit. Here, the Fermi surface characteristics and fundamental transport properties of similarly structured 2M‐WSe2bulk single crystals are investigated. The measurements of the angular dependent Shubnikov–de Haas oscillations, with support from first‐principles calculations, reveal multiple three‐ and two‐dimensional Fermi pockets, one of which exhibits a nontrivial Berry's phase. In addition, it is shown that the electronic properties of 2M‐WSe2are similar to those of orthorhombic MoTe2and WTe2, having a single dominant carrier type at high temperatures that evolves into coexisting electron and hole pockets with near compensation at temperatures below 100 K, suggesting the existence of a Lifshitz transition. Altogether, the observations provide evidence towards the topologically nontrivial electronic properties of 2M‐WSe2and motivate further investigation on the topological properties of 2Mtransition metal dichalcogenides in the atomically thin limit.
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- Award ID(s):
- 2309000
- PAR ID:
- 10577941
- Publisher / Repository:
- Wiley
- Date Published:
- Journal Name:
- Advanced Functional Materials
- ISSN:
- 1616-301X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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