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Synthesis of [Ni 23 Se 12 X 3 (PEt 3 ) 10 ] (X = Br, I) via Post-synthetic Modification
- PAR ID:
- 10578070
- Publisher / Repository:
- American Chemical Society
- Date Published:
- Journal Name:
- Inorganic Chemistry
- Volume:
- 64
- Issue:
- 6
- ISSN:
- 0020-1669
- Page Range / eLocation ID:
- 2926 to 2935
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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X Ray Photoelectron Spectroscopy was used to measure valence band offsets for Al 2 O 3 deposited by Atomic Layer Deposition on α -(Al x Ga 1-x ) 2 O 3 alloys over a wide range of Al contents, x, from 0.26–0.74, corresponding to a bandgap range from 5.8–7 eV. These alloys were grown by Pulsed Laser Deposition. The band alignments were type I (nested) at x <0.5, with valence band offsets 0.13 eV for x = 0.26 and x = 0.46. At higher Al contents, the band alignment was a staggered alignment, with valence band offsets of − 0.07 eV for x = 0.58 and −0.17 for x = 0.74, ie. negative valence band offsets in both cases. The conduction band offsets are also small at these high Al contents, being only 0.07 eV at x = 0.74. The wide bandgap of the α -(Al x Ga 1-x ) 2 O 3 alloys makes it difficult to find dielectrics with nested band alignments over the entire composition range.more » « less
