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Ultra-wide bandgap (UWBG) semiconductors are promising for many applications, such as power electronics and deep-ultraviolet photonics. In this research, UWBG β-phase magnesium gallium oxide (MgGaO) thin films with a bandgap of 5.1 eV were grown using low-temperature homo-buffer layers in a plasma-assisted molecular beam epitaxy system. The role of the growth temperature and thickness of low-temperature buffer layer on the quality of the active layer was studied using x-ray diffraction and transmission electron microscopy and by analyzing the properties of metal–semiconductor–metal photodetector devices based on these films. It is found that lower buffer growth temperature at 300 °C leads to higher crystal quality of active layer. For the same low buffer growth temperature, different crystal quality in the active layer is attained with different buffer layer thickness. A buffer layer thickness at 40 nm has the best active layer quality with the highest photo current under 265 nm illumination and long decay time as a result of reduced recombination of photo-generated carriers through fewer defects in the active layer.
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This content will become publicly available on August 12, 2025
Photoluminescence study of MgGa2O4 spinel oxide films grown by molecular beam epitaxy
As a promising ultrawide bandgap oxide semiconductor material in the spinel family, magnesium gallate (MgGa2O4) exhibits great potential applications in power electronics, transparent electronics, and deep ultraviolet optoelectronics. However, few studies reveal its photoluminescence (PL) properties. In this work, MgGa2O4 films were grown by using oxygen plasma assisted molecular beam epitaxy. The bandgap of MgGa2O4 spinel films is determined to be around 5.4–5.5 eV, and all samples have transmittance over 90% in the visible spectral range. X-ray diffraction patterns confirmed that the spinel films were grown highly along ⟨111⟩ oriented. Power and temperature dependent PL studies were investigated. Optical transitions involving self-trapped hole, oxygen vacancy deep donor, and magnesium atom on gallium site deep acceptor levels were revealed.
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- PAR ID:
- 10581069
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 125
- Issue:
- 7
- ISSN:
- 0003-6951
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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