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Abstract Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 105 A cm−2have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. The charge-spin conversion efficiencyθSHin TIs is quantified by both the SOT-induced shift of the magnetic switching field (θSH = 1.59) and the SOT-induced ferromagnetic resonance (ST-FMR) (θSH = 1.02), which is one order of magnitude larger than that in conventional heavy metals. These results inspire a revolution of SOT-MRAM from classical to quantum materials, with great potential to further reduce the energy consumption.
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This content will become publicly available on March 3, 2026
Gate‐Tunable Spin‐To‐Charge Conversion in Topological Insulator‐Magnetic Insulator Heterostructures at Room Temperature
Abstract Over the past decade, topological insulators have received enormous attention for their potential in energy‐efficient spin‐to‐charge conversion, enabled by strong spin‐orbit coupling and spin‐momentum locked surface states. Despite extensive research, the spin‐to‐charge conversion efficiency, usually characterized by the spin Hall angle (θSH), remains relatively low at room temperature. In this work, pulsed laser deposition is employed to fabricate high‐quality ternary topological insulator (Bi0.1Sb0.9)2Te3thin films on magnetic insulator Y3Fe5O12. It is found that the value ofθSHreaches ≈0.76 at room temperature and increases to ≈0.9 as the Fermi level is tuned to cross topological surface states via electrical gating. These findings provide an innovative approach to tailoring the spin‐to‐charge conversion in topological insulators and pave the way for their applications in energy‐efficient spintronic devices.
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- Award ID(s):
- 2241327
- PAR ID:
- 10581434
- Publisher / Repository:
- Wiley-VCH
- Date Published:
- Journal Name:
- Advanced Functional Materials
- ISSN:
- 1616-301X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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