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Title: Modeling a Strain and Piezo Potentials in an InAs/GaAs Quantum Dot
We investigated the single-electron spectrum of an InAs/GaAs quantum dot (QD) using an effective potential model developed in previous studies. Our objective was to explore the limits of applicability of this model. We conducted numerical simulations, introducing a piezoelectric potential as a perturbation to the effective potential. The profile of this additional potential was derived from theoretical numerical studies presented in the literature. We analyzed the impact of variations in this profile within the framework of the perturbation theory. Our findings indicate that within a variation range of 25%, the effective potential model remains applicable.  more » « less
Award ID(s):
2122044 2101041
PAR ID:
10588535
Author(s) / Creator(s):
; ; ; ;
Publisher / Repository:
MDPI
Date Published:
Journal Name:
Processes
Volume:
12
Issue:
11
ISSN:
2227-9717
Page Range / eLocation ID:
2524
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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