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1. Deeply subwavelength integrated excitonic van der Waals nanophotonics

   https://doi.org/10.1364/OPTICA.499059  

   Ling, Haonan; Manna, Arnab; Shen, Jialiang; Tung, Ho-Ting; Sharp, David; Fröch, Johannes; Dai, Siyuan; Majumdar, Arka; Davoyan, Artur R. (January 2023, Optica)

   The wave nature of light sets a fundamental diffraction limit that challenges confinement and control of light in nanoscale structures with dimensions significantly smaller than the wavelength. Here, we study light–matter interaction in van der Waals MoS₂nanophotonic devices. We show that light can be coupled and guided in structures with dimensions as small as ≃λ/16 (∼60nm at 1000 nm excitation wavelength), while offering unprecedented optical field confinement. This deep subwavelength optical field confinement is achieved by exploiting strong lightwave dispersion in MoS₂. We further study the performance of a range of nanophotonic integrated devices via far- and near-field measurements. Our near-field measurements reveal detailed imaging of excitation, evolution, and guidance of fields in nanostructured MoS₂, whereas our far-field study examines light excitation and coupling to highly confined integrated photonics. Nanophotonics at a fraction of a wavelength demonstrated here could dramatically reduce the size of integrated photonic devices and opto-electronic circuits with potential applications in optical information science and engineering. 

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2. Spin-dependent properties of optical modes guided by adiabatic trapping potentials in photonic Dirac metasurfaces

   https://doi.org/10.1038/s41565-023-01380-9  

   Kiriushechkina, Svetlana; Vakulenko, Anton; Smirnova, Daria; Guddala, Sriram; Kawaguchi, Yuma; Komissarenko, Filipp; Allen, Monica; Allen, Jeffery; Khanikaev, Alexander B. (April 2023, Nature Nanotechnology)

   The Dirac-like dispersion in photonic systems makes it possible to mimic the dispersion of relativistic spin-1/2 particles, which led to the development of the concept of photonic topological insulators. Despite recent demonstrations of various topological photonic phases, the full potential offered by Dirac photonic systems, specifically their ability to emulate the spin degree of freedom—referred to as pseudo-spin—beyond topological boundary modes has remained underexplored. Here we demonstrate that photonic Dirac metasurfaces with smooth one-dimensional trapping gauge potentials serve as effective waveguides with modes carrying pseudo-spin. We show that spatially varying gauge potentials act unevenly on the two pseudo-spins due to their different field distributions, which enables control of guided modes by their spin, a property that is unattainable with conventional optical waveguides. Silicon nanophotonic metasurfaces are used to experimentally confirm the properties of these guided modes and reveal their distinct spin-dependent radiative character; modes of opposite pseudo-spin exhibit disparate radiative lifetimes and couple differently to incident light. The spin-dependent field distributions and radiative lifetimes of their guided modes indicate that photonic Dirac metasurfaces could be used for spin-multiplexing, controlling the characteristics of optical guided modes, and tuning light–matter interactions with photonic pseudo-spins. 

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3. Highly efficient fiber to Si waveguide free-form coupler for foundry-scale silicon photonics

   https://doi.org/10.1364/PRJ.514999  

   Ranno, Luigi; Sia, Jia_Xu Brian; Popescu, Cosmin; Weninger, Drew; Serna, Samuel; Yu, Shaoliang; Kimerling, Lionel C; Agarwal, Anuradha; Gu, Tian; Hu, Juejun (January 2024, Photonics Research)

   As silicon photonics transitions from research to commercial deployment, packaging solutions that efficiently couple light into highly compact and functional sub-micrometer silicon waveguides are imperative but remain challenging. The 220 nm silicon-on-insulator (SOI) platform, poised to enable large-scale integration, is the most widely adopted by foundries, resulting in established fabrication processes and extensive photonic component libraries. The development of a highly efficient, scalable, and broadband coupling scheme for this platform is therefore of paramount importance. Leveraging two-photon polymerization (TPP) and a deterministic free-form micro-optics design methodology based on the Fermat’s principle, this work demonstrates an ultra-efficient and broadband 3-D coupler interface between standard SMF-28 single-mode fibers and silicon waveguides on the 220 nm SOI platform. The coupler achieves a low coupling loss of 0.8 dB for the fundamental TE mode, along with 1 dB bandwidth exceeding 180 nm. The broadband operation enables diverse bandwidth-driven applications ranging from communications to spectroscopy. Furthermore, the 3-D free-form coupler also enables large tolerance to fiber misalignments and manufacturing variability, thereby relaxing packaging requirements toward cost reduction capitalizing on standard electronic packaging process flows. 

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4. Wafer-scale waveguide sidewall roughness scattering loss characterization by image processing

   https://doi.org/10.1364/OE.558186  

   Khurana, Mohit; Delfan, Sahar; Yi, Zhenhuan (January 2025, Optics Express)

   Photonic integrated circuits (PICs) are vital for developing affordable, high-performance optoelectronic devices that can be manufactured at an industrial scale, driving innovation and efficiency in various applications. Optical loss of modes in thin film waveguides and devices is a critical measure of their performance. Thin film growth, lithography, masking, and etching processes are imperfect processes that introduce significant sidewall and top-surface roughness and cause dominating optical losses in waveguides and photonic structures. This roughness, as perturbations couple light from guided to far-field radiation modes, leads to scattering losses that can be estimated from theoretical models. Typically, with UV-based lithography, sidewall roughness is significantly larger than wafer-top surface roughness. Atomic force microscopy (AFM) imaging measurement gives a 3D and high-resolution roughness profile, but the measurement is inconvenient, costly, and unscalable for large-scale PICs and at wafer-scale. Here, we evaluate the sidewall roughness profile based on 2D high-resolution scanning electron microscope (SEM) imaging. We characterized the loss on two homemade nitride and oxide films on 3-inch silicon wafers with 12 waveguide devices on each and correlated the scattering loss estimated from a 2D image-based sidewall profile and theoretical Payne model. The lowest loss of guided fundamental transverse electric (TE₀) mode is found at 0.075 dB/cm at 633 nm across 24 devices, a record at visible wavelength. Our work shows 100% success (edge continuity span exceeding 95% of image width/height) in edge detection in image processing of all images to estimate autocorrelation function and optical mode loss. These demonstrations offer valuable insights into waveguide sidewall roughness and a comparison of experimental and 2D SEM image processing based loss estimations with applications in loss characterization at wafer-scale PICs. 

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5. High-density integrated delay line using extreme skin-depth subwavelength grating waveguides

   https://doi.org/10.1364/OL.479003  

   Ahmed, Ishtiaque; Ahmed, Syed Z.; Jaidye, Nafiz; Borhan Mia, Md; Bernussi, Ayrton; Kim, Sangsik (January 2023, Optics Letters)

   Optical delay lines control the flow of light in time, introducing phase and group delays for engineering interferences and ultrashort pulses. Photonic integration of such optical delay lines is essential for chip-scale lightwave signal processing and pulse control. However, typical photonic delay lines based on long spiral waveguides require extensively large chip footprints, ranging from mm²to cm²scales. Here we present a scalable, high-density integrated delay line using a skin-depth engineered subwavelength grating waveguide, i.e., an extreme skin-depth (eskid) waveguide. The eskid waveguide suppresses the crosstalk between closely spaced waveguides, significantly saving the chip footprint area. Our eskid-based photonic delay line is easily scalable by increasing the number of turns and should improve the photonic chip integration density. 

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