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1. Perspectives on epitaxial InGaP for quantum and nonlinear optics

   https://doi.org/10.1063/5.0241224  

   Akin, Joshua; Zhao, Yunlei; Haque, A_K_M Naziul; Fang, Kejie (December 2024, Applied Physics Letters)

   Nonlinear optical materials are essential for the development of both nonlinear and quantum optics and have advanced recently from bulk crystals to integrated material platforms. In this Perspective, we provide an overview of the emerging InGaP χ(2) nonlinear integrated photonics platform and its experimental achievements. With its exceptional χ(2) nonlinearity and low optical losses, the epitaxial InGaP platform significantly enhances a wide range of second-order nonlinear optical effects, from second-harmonic generation to entangled photon pair sources, achieving efficiencies several orders of magnitude beyond the current state of the art. Moreover, the InGaP platform enables quantum nonlinear optics at the few- and single-photon levels via passive nonlinearities, which has broad implications for quantum information processing and quantum networking. We also examine the current limitations of the InGaP platform and propose potential solutions to fully unlock its capabilities. 

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2. Wafer-scale fabrication of InGaP-on-insulator for nonlinear and quantum photonic applications

   https://doi.org/10.1063/5.0225747  

   Thiel, Lillian; Castro, Joshua_E; Steiner, Trevor_J; Nguyen, Catherine_L; Pechilis, Audrey; Duan, Liao; Lewis, Nicholas; Cole, Garrett_D; Bowers, John_E; Moody, Galan (September 2024, Applied Physics Letters)

   The development of manufacturable and scalable integrated nonlinear photonic materials is driving key technologies in diverse areas, such as high-speed communications, signal processing, sensing, and quantum information. Here, we demonstrate a nonlinear platform—InGaP-on-insulator—optimized for visible-to-telecommunication wavelength χ(2) nonlinear optical processes. In this work, we detail our 100 mm wafer-scale InGaP-on-insulator fabrication process realized via wafer bonding, optical lithography, and dry-etching techniques. The resulting wafers yield 1000 s of components in each fabrication cycle, with initial designs that include chip-to-fiber couplers, 12.5-cm-long nested spiral waveguides, and arrays of microring resonators with free-spectral ranges spanning 400–900 GHz. We demonstrate intrinsic resonator quality factors as high as 324 000 (440 000) for single-resonance (split-resonance) modes near 1550 nm corresponding to 1.56 dB/cm (1.22 dB/cm) propagation loss. We analyze the loss vs waveguide width and resonator radius to establish the operating regime for optimal 775–1550 nm phase matching. By combining the high χ(2) and χ(3) optical nonlinearity of InGaP with wafer-scale fabrication and low propagation loss, these results open promising possibilities for entangled-photon, multi-photon, and squeezed light generation. 

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3. Entangled photon pair generation in an integrated SiC platform

   https://doi.org/10.1038/s41377-024-01443-z  

   Rahmouni, Anouar; Wang, Ruixuan; Li, Jingwei; Tang, Xiao; Gerrits, Thomas; Slattery, Oliver; Li, Qing; Ma, Lijun (December 2024, Light: Science & Applications)

   Abstract Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities. To date, however, only entanglement of nuclear spins has been reported in silicon carbide, while an entangled photon source, whether it is based on bulk or chip-scale technologies, has remained elusive. Here, we report the demonstration of an entangled photon source in an integrated silicon carbide platform for the first time. Specifically, strongly correlated photon pairs are efficiently generated at the telecom C-band wavelength through implementing spontaneous four-wave mixing in a compact microring resonator in the 4H-silicon-carbide-on-insulator platform. The maximum coincidence-to-accidental ratio exceeds 600 at a pump power of 0.17 mW, corresponding to a pair generation rate of (9 ± 1) × 10³pairs/s. Energy-time entanglement is created and verified for such signal-idler photon pairs, with the two-photon interference fringes exhibiting a visibility larger than 99%. The heralded single-photon properties are also measured, with the heraldedg⁽²⁾(0) on the order of 10⁻³, demonstrating the SiC platform as a prospective fully integrated, complementary metal-oxide-semiconductor compatible single-photon source for quantum applications. 

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4. Ultrafast second-order nonlinear photonics—from classical physics to non-Gaussian quantum dynamics: a tutorial

   https://doi.org/10.1364/AOP.495768  

   Jankowski, Marc; Yanagimoto, Ryotatsu; Ng, Edwin; Hamerly, Ryan; McKenna, Timothy P; Mabuchi, Hideo; Fejer, M M (June 2024, Advances in Optics and Photonics)

   Photonic integrated circuits with second-order (χ⁽²⁾) nonlinearities are rapidly scaling to remarkably low powers. At this time, state-of-the-art devices achieve saturated nonlinear interactions with thousands of photons when driven by continuous-wave lasers, and further reductions in these energy requirements enabled by the use of ultrafast pulses may soon push nonlinear optics into the realm of single-photon nonlinearities. This tutorial reviews these recent developments in ultrafast nonlinear photonics, discusses design strategies for realizing few-photon nonlinear interactions, and presents a unified treatment of ultrafast quantum nonlinear optics using a framework that smoothly interpolates from classical behaviors to the few-photon scale. These emerging platforms for quantum optics fundamentally differ from typical realizations in cavity quantum electrodynamics due to the large number of coupled optical modes. Classically, multimode behaviors have been well studied in nonlinear optics, with famous examples including soliton formation and supercontinuum generation. In contrast, multimode quantum systems exhibit a far greater variety of behaviors, and yet closed-form solutions are even sparser than their classical counterparts. In developing a framework for ultrafast quantum optics, we identify what behaviors carry over from classical to quantum devices, what intuition must be abandoned, and what new opportunities exist at the intersection of ultrafast and quantum nonlinear optics. Although this article focuses on establishing connections between the classical and quantum behaviors of devices withχ⁽²⁾nonlinearities, the frameworks developed here are general and are readily extended to the description of dynamical processes based on third-orderχ⁽³⁾nonlinearities. 

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5. InGaP quantum nanophotonic integrated circuits with 1.5% nonlinearity-to-loss ratio

   https://doi.org/10.1364/OPTICA.440383  

   Zhao, Mengdi; Fang, Kejie (February 2022, Optica)

   Optical nonlinearity plays a pivotal role in quantum information processing using photons, from heralded single-photon sources and coherent wavelength conversion to long-sought quantum repeaters. Despite the availability of strong dipole coupling to quantum emitters, achieving strong bulk optical nonlinearity is highly desirable. Here, we realize quantum nanophotonic integrated circuits in thin-film InGaP with, to our knowledge, a record-high ratio of $1.5\mathrm{\%<\#comment/>}$between the single-photon nonlinear coupling rate ( $g/2\mathrm{\pi <\#comment/>}=11.2\mathrm{M}\mathrm{H}\mathrm{z}$) and cavity-photon loss rate. We demonstrate second-harmonic generation with an efficiency of $71200\pm <\#comment/>10300\mathrm{\%<\#comment/>}/\mathrm{W}$in the InGaP photonic circuit and photon-pair generation via degenerate spontaneous parametric downconversion with an ultrahigh rate exceeding 27.5 MHz/µW—an order of magnitude improvement of the state of the art—and a large coincidence-to-accidental ratio up to $1.4\times <\#comment/>{10}^4$. Our work shows InGaP as a potentially transcending platform for quantum nonlinear optics and quantum information applications. 

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