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Highly mismatched semiconductor alloys (HMAs) offer unusual combinations of bandgap and lattice constant, which are attractive for myriad applications. Dilute borides, such as BGa(In)As, are typically assumed to be HMAs. BGa(In)As can be grown in higher alloy compositions than Ga(In)NAs with comparable bandgaps, potentially enabling routes to lattice-matched telecom lasers on Si or GaAs. However, BGa(In)As remains relatively unexplored, especially with large fractions of indium. Density functional theory with HSE06 hybrid functionals was employed to study BGaInAs with 4%–44% In and 0%–11% B, including atomic rearrangement effects. All compositions showed a direct bandgap, and the character of the lowest conduction band was nearly unperturbed with the addition of B. Surprisingly, although the bandgap remained almost constant and the lattice constant followed Vegard's law with the addition of boron, the electron effective mass increased. The increase in electron effective mass was higher than in conventional alloys, though smaller than those characteristics of HMAs. This illustrates a particularly striking finding, specifically that the compositional space of BGa(In)As appears to span conventional alloy and HMA behavior, so it is not well-described by either limit. For example, adding B to GaAs introduces additional states within the conduction band, but further addition of In removes them, regardless of the atomic arrangement.
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Undoing band anticrossing in highly mismatched alloys by atom arrangement
The electronic structures of three highly mismatched alloys (HMAs)—GeC(Sn), Ga(In)NAs, and BGa(In)As—were studied using density functional theory with HSE06 hybrid functionals, with an emphasis on the local environment near the mismatched, highly electronegative atom (B, C, and N). These alloys are known for their counterintuitive reduction in the bandgap when adding the smaller atom, due to a band anticrossing (BAC) or splitting of the conduction band. Surprisingly, the existence of band splitting was found to be completely unrelated to the local displacement of the lattice ions near the mismatched atom. Furthermore, in BGaAs, the reduction in the bandgap due to BAC was weaker than the increase due to the lattice constant, which has not been observed among other HMAs but may explain differences among experimental reports. While local distortion in GeC and GaNAs was not the cause for BAC, it was found to enhance the bandgap reduction due to BAC. This work also found that mere contrast in electronegativity between neighboring atoms does not induce BAC. In fact, surrounding the electronegative atom with elements of even smaller electronegativity than the host (e.g., Sn or In) consistently decreased or even eliminated BAC. For a fixed composition, moving Sn toward C and In toward either N or B was always energetically favorable and increased the bandgap, consistent with experimental annealing results. Such rearrangement also delocalized the conduction band wavefunctions near the mismatched atom to resemble the original host states in unperturbed Ge or GaAs, causing the BAC to progressively weaken. These collective results were consistent whether the mismatched atom was a cation (N), anion (B), or fully covalent (C), varying only with the magnitude of its electronegativity, with B having the least effect. The effects can be explained by charge screening of the mismatched atom's deep electrostatic potential. Together, these results help explain differences in the bandgap and other properties reported for HMAs from different groups and provide insight into the creation of materials with designer properties.
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- Award ID(s):
- 2122041
- PAR ID:
- 10593825
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 135
- Issue:
- 11
- ISSN:
- 0021-8979
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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