skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Improved control of atomic layering in perovskite-related homologous series
Homologous series are layered phases that can have a range of stoichiometries depending on an index n. Examples of perovskite-related homologous series include (ABO3)nAO Ruddlesden–Popper phases and (Bi2O2) (An−1BnO3n+1) Aurivillius phases. It is challenging to precisely control n because other members of the homologous series have similar stoichiometry and a phase with the desired n is degenerate in energy with syntactic intergrowths among similar n values; this challenge is amplified as n increases. To improve the ability to synthesize a targeted phase with precise control of the atomic layering, we apply the x-ray diffraction (XRD) approach developed for superlattices of III–V semiconductors to measure minute deviations from the ideal structure so that they can be quantitatively eradicated in subsequent films. We demonstrate the precision of this approach by improving the growth of known Ruddlesden–Popper phases and ultimately, by synthesizing an unprecedented n = 20 Ruddlesden–Popper phase, (ATiO3)20AO where the A-site occupancy is Ba0.6Sr0.4. We demonstrate the generality of this method by applying it to Aurivillius phases and the Bi2Sr2Can–1CunO2n+4 series of high-temperature superconducting phases.  more » « less
Award ID(s):
1719875
PAR ID:
10595080
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
APL Materials
Volume:
9
Issue:
2
ISSN:
2166-532X
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. We outline a method to synthesize (ATiO3)nAO Ruddlesden–Popper phases with high-n, where the A-site is a mixture of barium and strontium, by molecular-beam epitaxy. The precision and consistency of the method described is demonstrated by the growth of an unprecedented (SrTiO3)50SrO epitaxial film. We proceed to investigate barium incorporation into the Ruddlesden–Popper structure, which is limited to a few percent in bulk, and we find that the amount of barium that can be incorporated depends on both the substrate temperature and the strain state of the film. At the optimal growth temperature, we demonstrate that as much as 33% barium can homogeneously populate the A-site when films are grown on SrTiO3 (001) substrates, whereas up to 60% barium can be accommodated in films grown on TbScO3 (110) substrates, which we attribute to the difference in strain. This detailed synthetic study of high n, metastable Ruddlesden–Popper phases is pertinent to a variety of fields from quantum materials to tunable dielectrics. 
    more » « less
  2. We demonstrate the epitaxial growth of the first two members, and the n=∞ member of the homologous Ruddlesden–Popper series of Ban+1InnO2.5n+1 of which the n=1 member was previously unknown. The films were grown by suboxide molecular-beam epitaxy where the indium is provided by a molecular beam of indium-suboxide [In2O (g)]. To facilitate ex situ characterization of the highly hygroscopic barium indate films, a capping layer of amorphous SiO2 was deposited prior to air exposure. The structural quality of the films was assessed by x-ray diffraction, reflective high-energy electron diffraction, and scanning transmission electron microscopy. 
    more » « less
  3. Abstract We provide a set of computational experiments based on ab initio calculations to elucidate whether a cuprate-like antiferromagnetic insulating state can be present in the phase diagram of the low-valence layered nickelate family (R $$_{n+1}$$ n + 1 Ni $$_n$$ n O $$_{2n+2}$$ 2 n + 2 , R= rare-earth, $$n=1-\infty$$ n = 1 - ∞ ) in proximity to half-filling. It is well established that at $$d^9$$ d 9 filling the infinite-layer ( $$n=\infty$$ n = ∞ ) nickelate is metallic, in contrast to cuprates wherein an antiferromagnetic insulator is expected. We show that for the Ruddlesden-Popper (RP) reduced phases of the series (finite n ) an antiferromagnetic insulating ground state can naturally be obtained instead at $$d^9$$ d 9 filling, due to the spacer RO $$_2$$ 2 fluorite slabs present in their structure that block the c -axis dispersion. In the $$n=\infty$$ n = ∞ nickelate, the same type of solution can be derived if the off-plane R-Ni coupling is suppressed. We show how this can be achieved if a structural element that cuts off the c -axis dispersion is introduced (i.e. vacuum in a monolayer of RNiO $$_2$$ 2 , or a blocking layer in multilayers formed by (RNiO $$_2$$ 2 ) $$_1$$ 1 /(RNaO $$_2$$ 2 ) $$_1$$ 1 ). 
    more » « less
  4. Abstract Integration of ferroelectric materials into novel technological applications requires low coercive field materials, and consequently, design strategies to reduce the ferroelectric switching barriers. In this first principles study, we show that biaxial strain, which has a strong effect on the ferroelectric ground states, can also be used to tune the switching barrier of hybrid improper ferroelectric Ruddlesden–Popper oxides. We identify the region of the strain-tolerance factor phase diagram where this intrinsic barrier is suppressed, and show that it can be explained in relation to strain-induced phase transitions to nonpolar phases. 
    more » « less
  5. 2D Ruddlesden–Popper perovskites have risen to prominence as stable and efficient photovoltaic materials because of their structural diversity, rich photophysics, and low moisture ingression. However, thin films processed from stoichiometric precursor solutions possess a broad phase distribution of different number of inorganic layers with random crystal orientation, crippling device performance. The effect of methylammonium chloride (MACl) and 3‐amino‐4‐phenolsulfonic acid (APSA) on the fabrication of perpendicularly oriented (PEA)2MA4Pb5I16films with narrow phase distribution using antisolvent and hot‐casting processing techniques is investigated. MACl plays a critical role in suppressing parasiticn ≤ 2 and 3D‐like phases. APSA performs the dual function of trap passivation and further narrowing phase polydispersity through strong coordination with Pb2+. Ex situ grazing‐incident wide‐angle X‐Ray scattering (GIWAXS) and ultrafast spectroscopic characterization reveal uniformly mixed‐phase distribution with disordered orientation in antisolvent treated films, while additive‐assisted hot‐casting treatment results in oriented, reverse‐graded phase distribution, i.e., small‐non the film surface and large‐nat the bottom. Arising thin films enable efficient p–i–n solar cells with an efficiency of 14.34%, and aVocof 1.20 V, retaining 96% initial efficiency after 1440 h under ambient conditions (RH = 50–60%) without encapsulation. 
    more » « less