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Desirable phosphors for lighting, scintillation and composite films must have good light absorption properties, high concentration quenching, high quantum efficiency, a narrow color emission, and so forth. In this work, we first show that undoped yttrium hafnate Y 2 Hf 2 O 7 (YHO) nanoparticles (NPs) display dual blue and red bands after excitation using 330 nm light. Based on density functional theory (DFT) calculations, these two emission bands are correlated with the defect states arising in the band-gap region of YHO owing to the presence of neutral and charged oxygen defects. Once doped with Eu 3+ ions (YHOE), the YHO NPs show a bright red emission, a long excited state lifetime and stable color coordinates upon near-UV and X-ray excitation. Concentration quenching is active when Eu 3+ doping reaches 10 mol% with a critical distance of ∼4.43 Å. This phenomenon indicates a high Eu 3+ solubility within the YHO host and the absence of Eu 3+ clusters. More importantly, the optical performance of the YHOE NPs has been further improved by lithium co-doping. The origin of the emission, structural stability, and role of Li + -co-doping are explored both experimentally and theoretically. DFT calculation results demonstrate that Li + -co-doping increases the covalent character of the Eu 3+ –O 2− bonding in the EuO 8 polyhedra. Furthermore, the YHOE NPs have been dispersed into polyvinyl alcohol (PVA) to make transparent nanocomposite films, which show strong red emission under excitation at 270 and 393 nm. Overall, we demonstrate that the YHO NPs with Eu 3+ and (Eu 3+ /Li + ) doping have a high emission intensity and quantum efficiency under UV and X-ray excitation, which makes them suitable for use as phosphors, scintillators and transparent films for lighting, imaging and detection applications.
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An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN
For the development of III-nitride-semiconductor-based monolithic micro-light-emitting diode (LED) displays, Eu,O-codoped GaN (GaN:Eu,O) is a promising material candidate for the red LEDs. The luminescence efficiency of Eu-related emission strongly depends on the local atomic structure of Eu ions. Our previous research has revealed that post-growth thermal annealing is an effective method for reconfiguring luminescent sites, leading to a significant increase in light output. We observed the preferential formation of a site with a peak at ∼2.004 eV by the annealing process. In this study, we demonstrate that it is a previously unidentified independent site (OMVPE-X) using combined excitation–emission spectroscopy and time-resolved photoluminescence measurements. In addition, we perform excitation power-dependent photoluminescence measurements and show that this OMVPE-X site dominates the emission at a low excitation power region despite its small relative abundance, suggesting a high excitation efficiency. Most importantly, applying our annealing technique to an LED exhibits a reasonably increased electroluminescence intensity associated with OMVPE-X, confirming that this site has a high excitation efficiency also under current injection. These results demonstrate the importance of OMVPE-X as a notable luminescent site for brighter and more efficient GaN:Eu,O-based LEDs.
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- Award ID(s):
- 2129183
- PAR ID:
- 10597534
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- AIP Advances
- Volume:
- 14
- Issue:
- 2
- ISSN:
- 2158-3226
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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