Low-angle grain boundaries (LAGBs) accommodate residual stress through the rearrangement and accumulation of dislocations during cold rolling. This study presents an electron wind force-based annealing approach to recover cold-rolling induced residual stress in FeCrAl alloy below 100 °C in 1 min. This is significantly lower than conventional thermal annealing, which typically requires temperatures around 750 °C for about 1.5 h. A key feature of our approach is the athermal electron wind force effect, which promotes dislocation movement and stress relief at significantly lower temperatures. The electron backscattered diffraction (EBSD) analysis reveals that the concentration of low-angle grain boundaries (LAGBs) is reduced from 82.4% in the cold-rolled state to a mere 47.5% following electropulsing. This level of defect recovery even surpasses the pristine material’s initial state, which exhibited 54.8% LAGBs. This reduction in LAGB concentration was complemented by kernel average misorientation (KAM) maps and X-ray diffraction (XRD) Full Width at Half Maximum (FWHM) measurements, which further validated the microstructural enhancements. Nanoindentation tests revealed a slight increase in hardness despite the reduction in dislocation density, suggesting a balance between grain boundary refinement and dislocation dynamics. This proposed low-temperature technique, driven by athermal electron wind forces, presents a promising avenue for residual stress mitigation while minimizing undesirable thermal effects, paving the way for advancements in various material processing applications.
more »
« less
Synergistic Thermal and Electron Wind Force-Assisted Annealing for Extremely High-Density Defect Mitigation
This study investigates the effectiveness of combined thermal and athermal stimuli in mitigating the extremely high-density nature of dislocation networks in the form of low-angle grain boundaries in FeCrAl alloy. Electron wind force, generated from very low duty cycle and high current density pulses, was used as the athermal stimulus. The electron wind force stimulus alone was unable to remove the residual stress (80% low-angle grain boundaries) due to cold rolling to 25% thickness reduction. When the duty cycle was increased to allow average temperature of 100 °C, the specimen could be effectively annealed in 1 min at a current density of 3300 A/mm2. In comparison, conventional thermal annealing requires at least 750 °C and 1.5 h. For specimens with 50% thickness reduction (85% low-angle grain boundaries), the electron wind force was again unable to anneal the defects even at 3300 A/mm2 current density and average temperature of 100 °C. Intriguingly, allowing average concurrent temperature of 200 °C eliminated almost all the low-angle grain boundaries at a current density of 700 A/mm2, even lower than that required for the 25% thickness reduced specimens. Comprehensive electron and X-ray diffraction evidence show that alloys with extremely high defect density can be effectively annealed in less than a minute at approximately 200 °C, offering a substantial improvement over conventional high-temperature annealing.
more »
« less
- Award ID(s):
- 2103928
- PAR ID:
- 10608345
- Publisher / Repository:
- MDPI
- Date Published:
- Journal Name:
- Materials
- Volume:
- 17
- Issue:
- 13
- ISSN:
- 1996-1944
- Page Range / eLocation ID:
- 3188
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
Abstract Traditional approaches to control the microstructure of materials, such as annealing, require high temperature treatment for long periods of time. In this study, we present a room temperature microstructure manipulation method by using the mechanical momentum of electrical current pulses. In particular, a short burst of high-density current pulses with low duty cycle is applied to an annealed FeCrAl alloy, and the corresponding response of microstructure is captured by using Electron Backscattered Diffraction (EBSD) analysis. We show evidence of controllable changes in grain orientation at specimen temperature around 28 °C. To demonstrate such microstructural control, we apply the current pulses in two perpendicular directions and observe the corresponding grain rotation. Up to 18° of grain rotation was observed, which could be reversed by varying the electropulsing direction. Detailed analysis at the grain level reveals that electropulsing in a specific direction induces clockwise rotation from their pristine state, while subsequent cross-perpendicular electropulsing results in an anticlockwise rotation. In addition, our proposed room temperature processing yields notable grain refinement, while the average misorientation and density of low-angle grain boundaries (LAGBs) remain unaltered. The findings of this study highlight the potentials of ‘convective diffusion’ in electrical current based materials processing science towards microstructural control at room temperature.more » « less
-
Traditional defect recovery methods rely on high-temperature annealing, often exceeding 750 °C for FeCrAl. In this study, we introduce electron wind force (EWF)-assisted annealing as an alternative approach to mitigate irradiation-induced defects at significantly lower temperatures. FeCrAl samples irradiated with 5 MeV Zr2+ ions at a dose of 1014 cm−2 were annealed using EWF at 250 °C for 60 s. We demonstrate a remarkable transformation in the irradiated microstructure, where significant increases in kernel average misorientation (KAM) and low-angle grain boundaries (LAGBs) typically indicate heightened defect density; the use of EWF annealing reversed these effects. X-ray diffraction (XRD) confirmed these findings, showing substantial reductions in full width at half maximum (FWHM) values and a realignment of peak positions toward their original states, indicative of stress and defect recovery. To compare the effectiveness of EWF, we also conducted traditional thermal annealing at 250 °C for 7 h, which proved less effective in defect recovery as evidenced by less pronounced improvements in XRD FWHM values.more » « less
-
Thermal annealing is a widely used strategy to enhance semiconductor device performance. However, the process is complex for multi-material multi-layered semiconductor devices, where thermoelastic stresses from lattice constant and thermal expansion coefficient mismatch may create more defects than those annealed. We propose an alternate low temperature annealing technique, which utilizes the electron wind force (EWF) induced by small duty cycle high density pulsed current. To demonstrate its effectiveness, we intentionally degrade AlGaN/GaN high electron mobility transistors (HEMTs) with accelerated OFF-state stressing to increase ON-resistance ∼182.08% and reduce drain saturation current ∼85.82% of pristine condition at a gate voltage of 0 V. We then performed the EWF annealing to recover the corresponding values back to ∼122.21% and ∼93.10%, respectively. The peak transconductance, degraded to ∼76.58% of pristine at the drain voltage of 3 V, was also recovered back to ∼92.38%. This recovery of previously degraded transport properties is attributed to approximately 80% recovery of carrier mobility, which occurs during EWF annealing. We performed synchrotron differential aperture x-ray microscopy measurements to correlate these annealing effects with the lattice structural changes. We found a reduction of lattice plane spacing of (001) planes and stress within the GaN layer under the gate region after EWF annealing, suggesting a corresponding decrease in defect density. Application of this low-temperature annealing technique for in-operando recovery of degraded electronic devices is discussed.more » « less
-
The investigation aimed to determine whether altering metal microstructure by introducing special grain boundaries through annealing could reduce the corrosion damage observed in the presence of pyruvate. Oxygen-free pure copper coupons were annealed at 325°C, 475°C and 950°C for varying durations to optimize the formation of ∑3 special boundaries. Samples annealed at 475°C for 30 min had the highest yield of such boundaries, thus, were selected for testing. Annealed and as-received, untreated, copper specimens were exposed under stagnant conditions to an aqueous oxic solution of sodium pyruvate for 30 days. Microscopy, spectroscopy, and electrochemical methods were employed to characterize the specimens prior to and following pyruvate exposure. Pyruvate caused localized corrosion of copper seen as micro pitting, irrespective of the specimen treatment. Reduced pitting severity and a decrease in the corrosion rate by 32 % were recorded for annealed coupons when compared to as-received ones. It is proposed that the difference in thickness and morphology of the oxide layer between annealed and as-received coupons, evidenced through electrochemical techniques, is the likely contributor to the improved corrosion resistance of annealed coupons.more » « less
An official website of the United States government

