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We report our studies of the thickness dependence of electrical resistivity and lattice constants in strained epitaxial thin films of calcium manganese oxide. Our results indicate the potential of bi-axial lattice mismatch strain as a handle for modulating electrical resistivity. We observe thickness dependence of lattice constants consistent with what is expected for strain relaxation for films thicker than 400 Å. At lower thickness values, anomalies are observed suggestive of reduced oxygen stoichiometry. We observe a remarkable decrease in electrical resistivity with decreasing film thickness. The resistivity of our thinnest films (5–7 nm) is about three orders of magnitude lower than the resistivity of bulk CaMnO3. Resistivity increases as the film thickness increases, along with the progression of strain relaxation. It is noteworthy that the thickness dependence of resistivity we observe in CMO thin films is the opposite of what has been reported for their hole-doped rare earth manganite counterpart La0.67Ca0.33MnO3 (LCMO), where tensile lattice mismatch strain suppresses metallicity, leading to the increase in resistivity with film thickness. We believe that the enhanced conductivity in our thinnest films is related to the possible oxygen deficiency promoted by tensile strain. Recent x-ray absorption measurements have revealed reduced oxygen content and associated changes in Mn valence states in tensile-strained CMO thin films, as also predicted by density functional theory calculations. This report is the first observation of electrical transport behavior possibly indicative of strain–oxygen stoichiometry coupling.
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This content will become publicly available on January 3, 2026
Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal
The electrical resistivity of conventional metals such as copper is known to increase in thin films as a result of electron-surface scattering, thus limiting the performance of metals in nanoscale electronics. Here, we find an unusual reduction of resistivity with decreasing film thickness in niobium phosphide (NbP) semimetal deposited at relatively low temperatures of 400°C. In films thinner than 5 nanometers, the room temperature resistivity (~34 microhm centimeters for 1.5-nanometer-thick NbP) is up to six times lower than the resistivity of our bulk NbP films, and lower than conventional metals at similar thickness (typically about 100 microhm centimeters). The NbP films are not crystalline but display local nanocrystalline, short-range order within an amorphous matrix. Our analysis suggests that the lower effective resistivity is caused by conduction through surface channels, together with high surface carrier density and sufficiently good mobility as the film thickness is reduced. These results and the fundamental insights obtained here could enable ultrathin, low-resistivity wires for nanoelectronics beyond the limitations of conventional metals.
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- Award ID(s):
- 2037652
- PAR ID:
- 10608350
- Publisher / Repository:
- American Association for the Advancement of Science
- Date Published:
- Journal Name:
- Science
- Volume:
- 387
- Issue:
- 6729
- ISSN:
- 0036-8075
- Page Range / eLocation ID:
- 62 to 67
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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